Tunable InP-based Optical IQ Modulator for 160 Gb/s

Prosyk, Kelvin; Brast, Tino; Gruner, Marko; Hamacher, Michael; Hoffmann, D.; Millett, R.; Velthaus, K.‐O.

doi:10.1364/ecoc.2011.th.13.a.5

Cited by 25 publications

(14 citation statements)

References 2 publications

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“…Nevertheless, through intensive research, devices generating QAM signals have recently appeared enabled both by improved modulator design and the use of digital signal processing (DSP) at both transmitter and receiver to compensate for the non-ideal phase and amplitude transfer functions. The current state of the art includes: a 40-GBaud InP modulator delivering 160 Gbit s À 1 via external polarization multiplexing of two QPSK (quadruple phase shift keying) 4 signals, an InP-based photonic integrated circuit (laser þ modulator integrated) capable of 256-Gbit s À 1 operation using 32-GBaud polarization-multiplexed 16QAM 5 ; a GaAs-based modulator at 150 Gbit s À 1 using 25-GBaud QAM signals 6 ; and finally a silicon-based modulator capable of 224 Gbit s À 1 16QAM 7 . Although the progress has been impressive, several drawbacks still remain.…”

mentioning

confidence: 99%

Modulator-free Quadrature Amplitude Modulation Signal Synthesis

Liu¹,

Kakande²,

Kelly³

et al. 2016

Optical Fiber Communication Conference

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mentioning

confidence: 99%

Modulator-free Quadrature Amplitude Modulation Signal Synthesis

Liu¹,

Kakande²,

Kelly³

et al. 2016

Optical Fiber Communication Conference

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“…Integrated approaches have been demonstrated where silica or polymer PLCs are assembled with LiNbO 3 or InP modulators [65][66][67]. Single-polarization I/Q modulators have been also demonstrated by monolithic InP or GaAs PICs [68][69][70]. However, monolithic PICs for dual-polarization I/Q modulators have not been achieved in InP PICs, to the best of our knowledge.…”

Section: Coherent Transmittersmentioning

confidence: 99%

Silicon photonic devices and integrated circuits

Dong¹,

Chen²,

et al. 2014

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Silicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review highperformance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitrideassisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.

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“…Single InP-based Mach-Zehnder modulators have been improved considerably in recent years [1][2][3][4][5]. As a result, qualified high performance modulator modules for data rates of 10 -40 Gb/s became already commercially available.…”

Section: Design and Benefits Of Twe Mach-zehnder Modulatorsmentioning

confidence: 99%

“…For example, e/o bandwidths between 10 Gb/s and 100 Gb/s can be achieved only by adapting the device parameters accordingly, which in the best case requires only updates of specific dimensions on the photolithographic masks applied during fabrication. Based on the modulator design and technology described before, a large number of single high performance MZ modulators have been already demonstrated which allow for data rates up to 100 Gb/s [1][2][3][4][5]. For example, fabricated single 43 Gb/s chirp free modulators provide < 6 dB insertion losses (IL), ≥ 20 dB extinction ratios (ER), and ≤ 2.5 V driving voltages (V π ) across 40 nm wavelength C-band [2].…”

Section: Design and Benefits Of Twe Mach-zehnder Modulatorsmentioning

confidence: 99%

“…For example, fabricated single 43 Gb/s chirp free modulators provide < 6 dB insertion losses (IL), ≥ 20 dB extinction ratios (ER), and ≤ 2.5 V driving voltages (V π ) across 40 nm wavelength C-band [2]. In the light of the achieved excellent performance data is was straight forward to develop also IQ modulator architectures [4,5] to achieve larger chip capacity by using quadrature phase shift keying (QPSK) formats (e.g. dual-polarization DP-QPSK).…”

Section: Design and Benefits Of Twe Mach-zehnder Modulatorsmentioning

confidence: 99%

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