Tunable magnetic anisotropy in obliquely sputtered Co60Fe40 thin films on Si(100)

Kaushalya,; Husain, Sajid; Barwal, Vineet; Gupta, Neelima; Hait, Soumyarup; Chaudhary, Sujeet

doi:10.1016/j.physb.2019.05.013

Cited by 10 publications

(1 citation statement)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The inclusion of some elements such as copper (Cu) and Ni in the synthesized thin films can lead to improvements in corrosion resistance and a decrease in coercivity [19]. For this purpose, the magnetic and structural properties of alloyed films in different combinations such as CoFeNi, CoFeAlN, CoFeCu, CoNi, and FeCoTiN have been investigated by many researchers [20][21][22][23][24][25]. Similar to CoFe, CoFeNi alloys exhibit high saturation magnetization, which is beneficial for magnetic applications [26,27].…”

Section: Introductionmentioning

confidence: 99%

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

Yıldız,

Karabulut,

Yıldırım

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on theelectrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p Si devices were produced by coating both materia- ls between the semiconductor and the metal using the RF sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by X-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current-voltage and transient photocurrent measurements were performed and analyzed under different light intensities. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current-voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. Additionally, the results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

show abstract