Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation

Diaz-Pinto, Carlos; Wang, Xuemei; Lee, Sungbae; Hadjiev, V. G.; De, Debtanu; Chu, W. K.; Peng, Haibing

doi:10.1103/physrevb.83.235410

Cited by 6 publications

(4 citation statements)

References 31 publications

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“…The dI/dV anomalies appear to be asymmetric with respect to V d , possibly owing to the different scattering strength for electrons and holes. We note that similar high energy anomalies with the electron-hole asymmetry are observed in different devices 22 , indicating its potential origin from optical phonon scattering.…”

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confidence: 76%

Hot electron transport in suspended multilayer graphene

et al. 2010

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We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been observed at source drain bias Vd = 0, along with anomalies at higher Vd likely induced by optical phonon scattering. For devices with low contact barriers, only the dI/dV dip at Vd = 0 is observed, and we find a well-fit logarithmic dependence of dI/dV on both the bias Vd and the temperature T. The logarithmic Vd dependence is explained with the hot electron effect and the logarithmic T dependence could be attributed to the weak-localization in two-dimensions

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confidence: 76%

Hot electron transport in suspended multilayer graphene

et al. 2010

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“…We also note that such dI/dV anomalies are not induced by defects scattering, since we do not observe such dI/dV anomalies in samples where we purposely introduced defects through ion-beam implantation. [15] The most likely origin of the high-energy dI/dV anomalies is the inelastic scattering of injected high-energy electrons through emission of phonons. [16][17][18] In this scenario, the probability of phonon emission processes is determined by the phonon density of states and the electron-phonon coupling strength.…”

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confidence: 99%

Probing phonon emission via hot carrier transport in suspended graphitic multilayers

Diaz-Pinto

Lee

Hadjiev

et al. 2011

Solid State Communications

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We study hot carrier transport under magnetic fields up to 15 T in suspended graphitic multilayers through differential conductance (dI/dV) spectroscopy. Distinct high-energy dI/dV anomalies have been observed and shown to be related to intrinsic phonon-emission processes in graphite. The evolution of such dI/dV anomalies under magnetic fields is further understood as a consequence of inter-Landau level cyclotronphonon resonance scattering. The observed magneto-phonon effects not only shed light on the physical mechanisms responsible for high-current transport in graphitic systems, but also offer new perspectives for optimizing performance in graphitic nano-electronic devices.Description: Figure 1S shows the phonon dispersion and phonon density of states (ph-DOS) of graphite calculated using the Density Functional Perturbation Theory (DFTP) [1] as implemented in the CASTEP code.[2] The first-principles energy calculations were done within the generalized-gradient approximation (GGA) with Perdew-Burke-Ernzerhof (PBE) exchangecorrelation functional [3] using the norm-conserved pseudopotential plane-wave method . The non-bonding interaction between graphene planes were accounted for by dispersion corrections of the form C 6 R -6 included in the DFT formalism by using Tkathcenko and Scheffer scheme. [4] We used a graphite crystal structure obtained from the experimental one by energy minimization and convergence tolerances 1.8 × 10 −7 eV/atom for energy, 2.0 × 10 −7 eV/Å for forces, 0.009 GPa for stresses, and 4.7 × 10 −10 Å for displacements. The phonon dispersion and ph-DOS were calculated over 23 × 23 × 8 Monkhorst-Pack grid in the k-space along the lines connecting the high symmetry points in the Brillouin zone.

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“…Nevertheless, irradiation damage can accumulate with increasing ion dose, so that the operation of graphene as an ion-transparent but gas-separating membrane depends crucially on its ability to withstand continuous irradiation during the experiment. Although the ion irradiation response of graphene has been recently studied both experimentally [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] and theoretically [9,27,28], the atomic-scale details of damage accumulation during continuous exposure to the ion beam remain unknown. In the experiments, ion doses were either very low creating only spatially well-separated defects or so high that graphene was completely destroyed, and it was not possible to get any insight into damage accumulation process.…”

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Ion irradiation tolerance of graphene as studied by atomistic simulations

Åhlgren

Kotakoski

Lehtinen

et al. 2012

Applied Physics Letters

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As impermeable to gas molecules and at the same time transparent to high-energy ions, graphene has been suggested as a window material for separating a high-vacuum ion beam system from targets kept at ambient conditions. However, accumulation of irradiation-induced damage in the graphene membrane may give rise to its mechanical failure. Using atomistic simulations, we demonstrate that irradiated graphene even with a high vacancy concentration does not show signs of such instability, indicating a considerable robustness of graphene windows. We further show that upper and lower estimates for the irradiation damage in graphene can be set using a simple model. V C 2012 American Institute of Physics. [http://dx.

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Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation

Cited by 6 publications

References 31 publications

Hot electron transport in suspended multilayer graphene

Hot electron transport in suspended multilayer graphene

Probing phonon emission via hot carrier transport in suspended graphitic multilayers

Ion irradiation tolerance of graphene as studied by atomistic simulations

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