Tunable Metastability of Surface Nanostructure Arrays

Jesson, D. E.; Munt, Timothy P; Shchukin, V. A.; Bimberg, D.

doi:10.1103/physrevlett.92.115503

Cited by 28 publications

(39 citation statements)

References 30 publications

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“…Some examples for complex metal-containing thin film systems are as follows: Pb nanoclusters on an MgO(100) oxide surface where coarsening kinetics displays nanoscale corrections; 40 formation and coarsening of partial and/or complete Ag bilayer islands on NiAl (110); 41 anomalous rapid coarsening in the Pb/ Si(111) system due to quantum size effects. 42 In addition, there are a substantial number of studies of coarsening for Ge/Si (111) semiconductor quantum dot systems, [43][44][45][46] which include assessment of anomalous behavior due to quantum dot shape transitions. 47 The second phenomenon discussed in this article is the effect of trace amounts of chemical additives on coarsening in metal homoepitaxial systems.…”

Section: Introductionmentioning

confidence: 99%

Coarsening of Two-Dimensional Nanoclusters on Metal Surfaces

et al. 2009

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We describe experimental observations and theoretical analysis of the coarsening of distributions of twodimensional nanoclusters, either adatom islands or vacancy pits, on metal surfaces. A detailed analyses is provided for Ag(111) and Ag(100) surfaces, although we also discuss corresponding behavior for Cu(111) and Cu(100) surfaces. The dominant kinetic pathway for coarsening can be either Ostwald ripening (OR), i.e., growth of larger clusters at the expense of smaller ones, or Smoluchowski ripening (SR), i.e., diffusion and coalescence of clusters. First, for pristine additive-free surfaces, we elucidate the factors which control the dominant pathway. OR kinetics generally follows the predictions of mesoscale continuum theories. SR kinetics is controlled by the size-dependence of cluster diffusion. However, this size-dependence, together with that of nanostructure shape relaxation upon coalescence, often deviates from mesoscale predictions as a direct consequence of the nanoscale dimension of the clusters. Second, we describe examples for the above systems where trace amounts of a chemical additive lead to dramatic enhancement of coarsening. We focus on the scenario where "facile reaction" of metal and additive atoms leads to the formation of mobile additivemetal complexes which can efficiently transport metal across the surface, i.e., additive-enhanced OR. A suitable reaction-diffusion equation formulation is developed to describe this behavior. ReceiVed: July 19, 2008; ReVised Manuscript ReceiVed: December 25, 2008 We describe experimental observations and theoretical analysis of the coarsening of distributions of twodimensional nanoclusters, either adatom islands or vacancy pits, on metal surfaces. A detailed analyses is provided for Ag(111) and Ag(100) surfaces, although we also discuss corresponding behavior for Cu (111) and Cu(100) surfaces. The dominant kinetic pathway for coarsening can be either Ostwald ripening (OR), i.e., growth of larger clusters at the expense of smaller ones, or Smoluchowski ripening (SR), i.e., diffusion and coalescence of clusters. First, for pristine additive-free surfaces, we elucidate the factors which control the dominant pathway. OR kinetics generally follows the predictions of mesoscale continuum theories. SR kinetics is controlled by the size-dependence of cluster diffusion. However, this size-dependence, together with that of nanostructure shape relaxation upon coalescence, often deviates from mesoscale predictions as a direct consequence of the nanoscale dimension of the clusters. Second, we describe examples for the above systems where trace amounts of a chemical additive lead to dramatic enhancement of coarsening. We focus on the scenario where "facile reaction" of metal and additive atoms leads to the formation of mobile additivemetal complexes which can efficiently transport metal across the surface, i.e., additive-enhanced OR. A suitable reaction-diffusion equation formulation is developed to describe this behavior.

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Section: Introductionmentioning

confidence: 99%

Coarsening of Two-Dimensional Nanoclusters on Metal Surfaces

et al. 2009

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“…The growth of nano-structures on a weakly interacting metal substrate is an important subject in fundamental research [1][2][3] and in technical applications. The motivation for exploring two-dimensional surface phases is related to adsorption-induced catalyst improvement [4,5] and to epitaxial film growth in metals [6][7][8].…”

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confidence: 99%

Phase transformations of the Pt/Ru(0001) interface studied by photoemission

et al. 2008

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“…The formation of QDs in lattice-mismatched heteroepitaxial growth is frequently interpreted as an adatom aggregation process on a growth surface [81][82][83][84][85][86][87][88][89][90][91][92], which is very similar to the well-known physical scenario for epitaxial growth of 2D islands in the submonolayer stage in homoepitaxial growth. In the conventional description of homoepitaxial growth in the submonolayer regime, the growth process of 2D epitaxial islands is divided into three distinct regimes: nucleation, steady growth, and coalescence; this is very similar to the kinetic theory of first-order phase transformations.…”

Section: Physical Scenario In the Submonolayer Regime Of Homoepitaxiamentioning

confidence: 70%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

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Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2-bonded to sp 3-bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

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Tunable Metastability of Surface Nanostructure Arrays

Cited by 28 publications

References 30 publications

Coarsening of Two-Dimensional Nanoclusters on Metal Surfaces

Coarsening of Two-Dimensional Nanoclusters on Metal Surfaces

Phase transformations of the Pt/Ru(0001) interface studied by photoemission

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

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