2021
DOI: 10.1016/j.rinp.2021.104233
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Tunable multi-band terahertz absorber based on composite graphene structures with square ring and Jerusalem cross

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Cited by 42 publications
(16 citation statements)
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“…Most of the THz absorbers researched in the literatures operate at frequencies beyond 1.0 THz; however, since many high-power THz sources based on opto-electronics technology are working at a frequency range below 1.0 THz [22][23][24][25]62], it is essential to design a device that has optical absorption for both TE and TM polarization modes in the frequency range of the sub-THz band. Our multi-band proposed microstructure design operates below 1 THz, having N-band absorption peak resonances, which is so valuable in high-power THz sources and optical sensing and detection applications.…”
Section: Spectral Responsesmentioning
confidence: 99%
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“…Most of the THz absorbers researched in the literatures operate at frequencies beyond 1.0 THz; however, since many high-power THz sources based on opto-electronics technology are working at a frequency range below 1.0 THz [22][23][24][25]62], it is essential to design a device that has optical absorption for both TE and TM polarization modes in the frequency range of the sub-THz band. Our multi-band proposed microstructure design operates below 1 THz, having N-band absorption peak resonances, which is so valuable in high-power THz sources and optical sensing and detection applications.…”
Section: Spectral Responsesmentioning
confidence: 99%
“…Therefore, multi-band absorbers have also been designed in GHz [20], THz [21][22][23][24][25], nearinfrared (NIR) [3,26,27], visible [28,29], far-infrared (FIR) [30], mid-infrared (MIR) [31,32], and infrared (IR) [33][34][35] ranges.…”
Section: Introductionmentioning
confidence: 99%
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“…However, there are still problems of low efficiency and poor stability in current polymer solar cells, which make it difficult to popularize and use. Indium Tin Oxide semiconductor transparent conductive film (ITO), with good conductivity and transparency [23][24][25], and the combination of ITO and PEDOT:PSS, can enhance the conductivity of PEDOT:PSS [26,27]. ITO stacks on PEDOT:PSS, and then a tunneling effect occurs between the two, forming an ohmic contact [28].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the most significant feature of graphene plasmons is that the surface conductivity of graphene can be adjusted by changing the Fermi level or chemical potential. Thus, the application of an external gate voltage and the method of light-induced doping are approaches to convert graphene between the metallic state and the dielectric state to control the optical properties of graphene [51][52][53]. This means that the dynamic tunability of graphene makes it unnecessary to rebuild a new structure to change the characteristics of the absorber.…”
Section: Introductionmentioning
confidence: 99%