Tunable nanoelectromechanical resonator for logic computations

Abstract

There has been remarkable interest in nanomechanical computing elements that can potentially lead to a new era in computation due to their re-configurability, high integration density, and high switching speed. Here we present a nanomechanical device capable of dynamically performing logic operations (NOR, NOT, XNOR, XOR, and AND). The concept is based on the active tuning of the resonance frequency of a doubly-clamped nanoelectromechanical beam resonator through electro-thermal actuation. The performance of this re-configurable logic device is examined at elevated temperatures, ranging from 25 °C to 85 °C, demonstrating its resilience for most of the logic operations. The proposed device can potentially achieve switching rate in μs, switching energy in nJ, and an integration density up to 10 per cm. The practical realization of this re-configurable device paves the way for nano-element-based mechanical computing.

Fabrication and Characterization of MWCNT-Based Bridge Devices

“…The simulated pull-in voltages range from few tens to hundreds of volts limiting their integration with CMOS-devices as static switches. However, such very high pull-in voltages is desirable for resonators and dynamic-mode applications [4,5]. For static applications, such as switches, the device actuation voltages can be reduced by fabricating devices with lower actuation gap.…”

“…4b). One promising method to detect the resonance frequency using direct capacitive detection technique [4,5] is to fabricate similar bridge structures on insulting substrates, such as quartz, with localized actuation gate electrodes [13].…”

“…components [4][5][6][7], and electrical interconnects [8,9]. Various materials, such as Si [10], SiC [11], AlN [12], and InAs [13] have been used to realize micro/nano bridges [14] for these applications.…”

“…Another point to consider is adhesion. In the CVD direct growth approach, one relies on weak van der Waals forces or post-synthesis deposition and patterning of metal electrodes using e-beam/photo-lithography [4,5,22,29] to realize the interconnector. Interestingly, most of the reported devices are single to few walled CNTs with outer diameter less than 5 nm or MWCNTs with outer diameter typically less than 50 nm.…”

Highly Tunable Electrostatic Nanomechanical Resonators

“…Such resonators have been also proposed for numerous applications, such as mass/gas sensors [2,3], memory elements [4,5], logic devices [6,7], gyroscopes [8], energy harvesters [9], and signal processing elements [10,11]. Generally, the resonance frequency of a resonator can be tuned by changing its stiffness through applied axial loads, which can be applied by electrostatic [12], electromagnetic [13], or electrothermal [14] actuations.…”