Tunable, narrow-band light emission from size-selected Si nanoparticles produced by pulsed-laser ablation

Osone

et al. 2017

KONA

Self Cite

305

110

Laser ablation is a method for fabricating various kinds of nanoparticles including semiconductor quantum dots, carbon nanotubes, nanowires, and core shell nanoparticles. In this method, nanoparticles are generated by nucleation and growth of laser-vaporized species in a background gas. The extremely rapid quenching of vapor is advantageous in producing high purity nanoparticles in the quantum size range (< 10 nm). In this review, the formation mechanism of nanoparticles by laser ablation is summarized. Recent progress on the control of nanoparticle size and the challenges for functional nanoparticle synthesis by advanced laser ablation technology are then discussed.

Section: Introductionmentioning

confidence: 99%

Synthesis of Nanoparticles by Laser Ablation: A Review

Osone

et al. 2017

KONA

Self Cite

305

110

“…These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications.…”

mentioning

confidence: 99%

“…20 Stokes/anti-Stokes Raman spectra in a Si/SiGe multilayer sample on a Si substrate collected using different excitation wavelengths (indicated). Spectra are shifted vertically for clarity and c-Si Raman spectrum is shown for comparison.…”

mentioning

confidence: 99%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

“…The chain agglomerates of metal oxides generated by laser ablation show elastic properties under the electron microscope (Ogawa et al, 2000). Laser-synthesized silicon nanoparticles emit visible light at room temperature (Yamada et al, 1996;Orii et al, 2003). El-Shall (1996) developed a method of laser-vaporization-controlled condensation (LVCC) and used it to fabricate various kinds of nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

“…This combination of laser ablation and LP-DMA provides a powerful tool for the analysis of various properties of nanoparticles. In the last 2 years, for example, we have used this combination to study the size-dependent optical properties of Si nanoparticles (Orii et al, 2003) and the magnetic properties of Ni nanoparticles .…”

Section: Introductionmentioning

confidence: 99%

Laser ablation synthesis of monodispersed magnetic alloy nanoparticles

et al. 2005

Self Cite

Monodispersed CoPt alloy nanoparticles were synthesized by a pulsed laser ablation (PLA) technique coupled with a low-pressure operating differential mobility analyzer (LP-DMA). The CoPt alloy nanoparticles were generated by laser ablating a solid Co-Pt target. In CoPt alloy nanoparticles synthesized from a target with a Co composition of 75 at%, the nanoparticle surfaces were covered by an oxide layer and exhibited a core-shell structure. In contrast, no shell was observed in particles generated from a target with a Co:Pt ratio of 50:50 at%. According to an EDX analysis, the compositions of the individual nanoparticles were almost the same as that of the target material. Finally, the magnetic hysteresis loops of the CoPt alloy nanoparticles exhibited ferromagnetism.