Tunable photoresponse properties of CuI/Si self-powered photodetectors through Zn doping engineering

Wang, Mingyang; Zhuang, Mingyu; Ge, Lei; Yuan, Yuzhuo; Wang, Zhiyuan; Liu, Wencheng; Li, Hu; Song, Aimin

doi:10.1016/j.apsusc.2024.159400

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

2025

Publication Types

Select...

Article3

Preprint1

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Removal of radioactive iodine by Cu2O prepared with PVP as an active agent: Role of crystal facets and oxygen vacancy in adsorption mechanisms

Dai,

Chen,

et al. 2024

Chemical Engineering Journal

View full text Add to dashboard Cite

Removal of radioactive iodine by Cu2O prepared with PVP as an active agent: Role of crystal facets and oxygen vacancy in adsorption mechanisms

Dai,

Chen,

et al. 2024

Chemical Engineering Journal

View full text Add to dashboard Cite

Vis-infrared wide-band and self-powered photodetectors base on CuI/MoS2 van der Waals heterostructure

Yang,

Zhao,

Yang

et al. 2025

Journal of Molecular Structure

View full text Add to dashboard Cite

Spraying-Deposited Transparent p-Type Sn-Doped CuI Film and Its Ultrahigh-Speed Self-Powered Photodetector

Xu,

Liu,

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The exploitation of simply processed p-type semiconductors and photodetectors with promising optoelectrical properties remains challenging yet essential for current and future advanced optoelectronic applications. Transparent p-type CuI and Sn-doped CuI (Cu−Sn−I) films and their self-powered photodetectors have been successfully fabricated by the spraying method. It is found that the incorporation of Sn dopants enhances the optical, electrical, and photoelectric properties of CuI thin films as well as their corresponding self-powered heterojunction photodetectors. This improvement of the optoelectrical properties of the Cu−Sn−I film and its photodetector can be attributed to the adjustment of the acceptor defect level and increased hole concentration resulting from Sn doping. The Cu−Sn−I/n-Si photodetector exhibits a responsivity of 10.7 mA/W, a detectivity of 6.79 × 10 11 Jones, and a response time of 77 μs/30 μs (0 V bias). The response time exhibits the fastest rise and decay times compared with the other CuI-based self-powered UV photodetectors in recent years, showcasing promising applications in the realm of transparent electronics moving forward. This study also presents an effective strategy for enhancing the electrical properties of p-type semiconductors and devices through effective doping.

show abstract

Tunable photoresponse properties of CuI/Si self-powered photodetectors through Zn doping engineering

Cited by 4 publications

References 38 publications

Removal of radioactive iodine by Cu2O prepared with PVP as an active agent: Role of crystal facets and oxygen vacancy in adsorption mechanisms

Removal of radioactive iodine by Cu2O prepared with PVP as an active agent: Role of crystal facets and oxygen vacancy in adsorption mechanisms

Vis-infrared wide-band and self-powered photodetectors base on CuI/MoS2 van der Waals heterostructure

Spraying-Deposited Transparent p-Type Sn-Doped CuI Film and Its Ultrahigh-Speed Self-Powered Photodetector

Contact Info

Product

Resources

About