Tunable polarization-drived superior energy storage performance in PbZrO ₃ thin films

Abstract

Antiferroelectric PbZrO3 films have great potential to be used as the energy storage dielectrics due to the unique electric field-induced phase transition character. But the phase transition process always accompanies polarization hysteresis effect that induces large energy loss and lowers Journal of Advanced Ceramics https://mc03.manuscriptcentral.com/jacer 2 the breakdown strength, leading to inferior energy storage density as well as low efficiency. In this work, the synergistical strategies by doping smaller ions of Li + -Al 3+ to substitute Pb 2+ and lowering the annealing temperature from 700℃ to 550℃ are proposed to change the microstructure and tune the polarization character of PbZrO3 films, excepting to dramatically improve the energy storage performances. The prepared Pb(1-x)(Li0.5Al0.5)xZrO3 (abbreviated as P(1-x)(L0.5A0.5)xZO) films exhibit ferroelectric-like (FE) rather than antiferroelectric (AFE) character once the doping content of Li + -Al 3+ ions reaches 6 mol%, accompanying a significant improvement of energy storage density of 49.09 J/cm 3 , but energy storage efficiency is only 47.94% due to the long-correlation of ferroelectric domains. Accordingly, the low-temperature annealing is carried out to reduce the crystalline degree and the polarization loss. P0.94(L0.5A0.5)0.06ZO films annealed at 550℃ deliver a linear-like polarization rather than ferroelectric-like behavior annealed at 700℃, the lowered remanent polarization as well as improved breakdown strength (4814 kV/cm) result in the superior energy storage density of 58.7 J/cm 3 and efficiency of 79.16%, simultaneously possessing excellent frequency and temperature stability, and good electric fatigue tolerance.

Robust Energy Storage Property of La-Doped PZT Films Within a Wide Temperature Range

“…Hao et al found excellent energy storage property in PLZST films, followed by much more work including PBLZS, PZO, and PCZ . It has been proved that elemental modification is an efficient strategy for the enhancement of electrical and polarization properties. − The recoverable energy storage density ( W reco ), loss density ( W loss ), and total energy density ( W total ), as well as the energy conversion efficiency (η) can be calculated according to eqs - − W normalr normale normalc normalo = ∫ P normalr P max E .25em normald P W normalt normalo normalt normala normall = ∫ 0 P max E .25em normald P η = W r e c o W normalr normale normalc normalo + W normall normalo normals normals × 100 % = W r e c o W t o t a l × 100 % where P max is the maximum polarization intensity of films, and P r is the remnant polarization intensity. In recent years, research related to the energy storage behavior has been focused on the phase transition properties regarding the energy storage scenes. ,…”

“…Hao et al found excellent energy storage property in PLZST films, followed by much more work including PBLZS, PZO, and PCZ . It has been proved that elemental modification is an efficient strategy for the enhancement of electrical and polarization properties. − The recoverable energy storage density ( W reco ), loss density ( W loss ), and total energy density ( W total ), as well as the energy conversion efficiency (η) can be calculated according to eqs - − where P max is the maximum polarization intensity of films, and P r is the remnant polarization intensity. In recent years, research related to the energy storage behavior has been focused on the phase transition properties regarding the energy storage scenes. , It has been reported that high energy density could be obtained due to their large spontaneous polarization and electrode modulation. , However, a narrow working range is still a problem for real application scenes .…”

Improved energy storage performance in flexible (PbLa)ZrO3 thin films via nanocrystalline engineering

“…Providing advanced dielectric materials with high energy storage properties is critical for the development of dielectric capacitors. [5][6][7] The energy storage performances can be calculated from the polarization-electric field (P-E) loops, as shown in Fig. S1 (ESI †).…”

“…In recent years, many efforts have been put forward to enhance the W rec and Z of PbZrO 3 -based antiferroelectric films, including ionic doping, multilayer structure, nanocrystalline engineering, preparation process, etc. [24][25][26][27][28] For example, the electric fieldinduced phase transition behavior of antiferroelectric thin films can be effectively controlled through doping moderate La 3+ . 29 A W rec of 23.1 J cm À3 and a Z of 73% are obtained in La-doped PbZrO 3 films.…”

“…Providing advanced dielectric materials with high energy storage properties is critical for the development of dielectric capacitors. 5–7…”