Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

Abstract

Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 Å. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.

Electronic Properties of h‐BCN–Blue Phosphorene van der Waals Heterostructures

“…This feature is attributed to the fact that the band gap of BlueP is larger than that of BlackP. Such a narrow band discontinuity implies that the type of band offset is sensitively responsive to external influences (as theoretically demonstrated by, e.g., perpendicular electric fields, impurities and vertical compression) …”

“…Such an arrow band discontinuityi mplies that the type of band offset is sensitively responsive to external influences (as theoretically demonstrated by,e .g.,p erpendicular electric fields, impurities and vertical compression). [39][40][41] Furthermore,P DOS also indicates that the band edges of h-BN are predominantly derived from the overlap of Np z and Bp z states that resultsi nb ondinga nd anti-bonding p bonds. [54] The degenerate p x and p y states, positioned at an energy lower than the VBM, signifies the sp 2 bondingcharacter of h-BN.…”

“…Therefore, the two‐dimensional BN acts as the protective coating and retains the electronic properties of phosphorene. Beyond air stability, the generic vdWHs interestingly exhibit peculiar physical phenomena that also provide additional freedom to tailor properties . The electronic transport across the interfaces is effectively controllable by means of perpendicular external electric fields because of the weak screening of electron–hole interactions .…”

“…Beyonda ir stability,t he generic vdWHs interestingly exhibit peculiar physical phenomena that also provide additional freedom to tailor properties. [36][37][38][39][40][41] The electronic transport across the interfaces is effectively controllable by meanso fp erpendiculare xternal electric fields because of the weak screening of electron-hole interactions. [42] Band alignment can be modulated by engineering the band gaps of constituent sheets.…”

Effect on Schottky Barrier of Graphene/WS2 Heterostructure With Vertical Electric Field and Biaxial Strain

“…In recent years, many graphene (G)‐based two‐dimensional heterostructures with a variety of other materials have been studied, such as G/GaN, G/graphene‐like (g)‐GaSe, G/MoS 2 , G/WSe 2 , G/GaS, G/MoSeS, etc. These two‐dimensional materials are all stacked with graphene by weak vdW force .…”