Tunable Schottky barrier of WSi2N4/graphene heterostructure via interface distance and external electric field

Ma, Xinguo; Bo, Huatin; Gong, Xue‐Qing; Yuan, Gang; Peng, Zhuo; Lü, Jingjing; Xie, Qihai

doi:10.1016/j.apsusc.2023.156385

Cited by 16 publications

(8 citation statements)

References 71 publications

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“…The work function is an intrinsic surface property of a material, and understanding and controlling its value is one of the fundamental factors in manipulating electron flow in various electronic applications. The computed results are listed in table 1, and they are found to be larger compared with the reported theoretical values for MoSi 2 N 4 (5.12 eV) [58] and WSi 2 N 4 (4.94) [59] monolayers. Following the structural optimization, to determine the strength of the binding between the constituent atoms in the unit cell, the cohesive energy per atom (E C ) of the examined systems is calculated using the equation below:…”

Section: Structural Propertiesmentioning

confidence: 76%

Two-dimensional MSi₂N₄ (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications

Jahangirzadeh Varjovi,

Ershadrad,

Sanyal

et al. 2023

2D Mater.

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The recent growth of two-dimensional (2D) layered crystals of MoSi2N4 and WSi2N4 has sparked significant interest due to their outstanding properties and potential applications. This development has paved the way for a new and large family of 2D materials with a general formula of MA 2 Z 4. In this regard, motivated by this exciting family, we propose two structural phases (1T- and 1H-) of MSi2N4 (M = Ge, Sn, and Pb) monolayers and investigate their structural, vibrational, mechanical, electronic and optical properties by using first-principles methods. The two phases have similar cohesive energies, while the 1T structures are found to be more energetically favorable than their 1H counterparts. The analysis of phonon spectra and ab initio molecular dynamics simulations indicate that all the suggested monolayers, except for 1H-GeSi2N4, are dynamically and thermally stable even at elevated temperatures. The elastic stability and mechanical properties of the proposed crystals are examined by calculating their elastic constants (C ij ), in-plane stiffness ( Y 2D ), Poisson’s ratio (ν), and ultimate tensile strain (UTS). Remarkably, the considered systems exhibit prominent mechanical features such as substantial in-plane stiffness and high UTS. The calculated electronic band structures reveal that both the 1T- and 1H-MSi2N4 nanosheets are wide-band-gap semiconductors and their energy band gaps span from visible to ultraviolet region of the optical spectrum, suitable for high-performance nanoelectronic device applications. Lastly, the analysis of optical properties shows that the designed systems have isotropic optical spectra, and depending on the type of the system, robust absorption of ultraviolet and visible light (particularly in 1H-PbSi2N4 monolayer) is predicted. Our study not only introduces new members to the family of 2D MA 2 Z 4 crystals but also unveils their intriguing physical properties and suggests them as promising candidates for diverse nanomechanical and optoelectronic applications.

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Section: Structural Propertiesmentioning

confidence: 76%

Two-dimensional MSi₂N₄ (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications

Jahangirzadeh Varjovi,

Ershadrad,

Sanyal

et al. 2023

2D Mater.

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“…More importantly, the ability to adjust contact characteristics in the NbS 2 /MoSSe heterostructure is crucial for its applications in next-generation electronic devices. Recently, applying electric elds is considered as an effective way to control both the electronic properties and contact characteristics of 2D heterostructures, such as graphene-based heterostructures [63][64][65][66] and TMD-based heterostructures. [67][68][69][70] Therefore, we further investigate the ability to adjust the electronic properties and contact characteristics in the NbS 2 /MoSSe heterostructure by applying electric elds.…”

Section: Resultsmentioning

confidence: 99%

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS₂/Janus MoSSe van der Waals heterostructure

Nha,

Nguyen,

Hieu

et al. 2024

Nanoscale Adv.

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“…It enables control over current flow and resistance variations under SET and RESET operations, responsible for transitioning device states between LRS and HRS. The calculated effective Schottky barrier height for Au/Gr/MoS 2 /Au and Au/Gr/WS 2 /Au devices is 0.28 and 0.69 eV, respectively. − …”

Section: Resistive Switching (Rram) Measurementsmentioning

confidence: 99%

Self-Rectifying Gr/TMDC Heterostructures: Candidates for Resistive Switching Memory Devices

Aftab,

Ali,

Mehmood

et al. 2024

ACS Appl. Electron. Mater.

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Self-rectifying graphene-transition metal dichalcogenides (Gr/TMDCs)-based resistive random-access memory (ReRAM or RRAM) has been shown to be a promising candidate for next-generation nonvolatile memory technology. However, the low resistance on/off ratio and the high operating voltage are still big challenges for low power-consuming devices. Here, we reported Au/Gr/MoS 2 /Au-and Au/Gr/WS 2 /Au-based ReRAM structures, thereby operating at a low voltage with a high on/off current ratio of ∼10 3 . Also, our results showed excellent endurance (∼2 × 10 2 cycles) and stable retention performance (∼10 4 s), which demonstrate the promising characteristics of memory devices. Additionally, in the Au/Gr/WS 2 /Au structure, the rectifying zone is observed at −2 V, which prevents interference with adjacent cells during reading operations. In reverse bias, the purposed device has an intrinsically self-rectifying property, not requiring to reset the device for operation. The self-rectifying property of the Au/Gr/ WS 2 /Au structure allows it to cover a 48 × 49 RRAM array. This research on Gr/TMDCs-based RRAM provides the basis for future miniaturization of nanoelectronics.

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Tunable Schottky barrier of WSi2N4/graphene heterostructure via interface distance and external electric field

Cited by 16 publications

References 71 publications

Two-dimensional MSi₂N₄ (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications

Two-dimensional MSi₂N₄ (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS₂/Janus MoSSe van der Waals heterostructure

Self-Rectifying Gr/TMDC Heterostructures: Candidates for Resistive Switching Memory Devices

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Tunable Schottky barrier of WSi2N4/graphene heterostructure via interface distance and external electric field

Cited by 16 publications

References 71 publications

Two-dimensional MSi2N4 (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications

Two-dimensional MSi2N4 (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure

Self-Rectifying Gr/TMDC Heterostructures: Candidates for Resistive Switching Memory Devices

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Product

Resources

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Two-dimensional MSi₂N₄ (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications

Two-dimensional MSi₂N₄ (M = Ge, Sn, and Pb) monolayers: promising new materials for optoelectronic applications

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS₂/Janus MoSSe van der Waals heterostructure