2021
DOI: 10.1016/j.apsusc.2021.149654
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Tunable Schottky barriers and electronic properties in van der Waals heterostructures of semiconducting monolayer gold sulfides and graphene

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Cited by 8 publications
(1 citation statement)
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“…With each band alignment holding a different application for the preparation of different optoelectronic devices, it is desirable to construct heterostructures with tunable optoelectronic properties, especially the tunable band alignment. Up to now, a considerable amount of strategies has been carried out on the investigation of band alignment and band structure engineering such as doping method [17,18], external strains [19], interlayer distance modulation [20], external electric field [21,22] and so on. Very recently, Villaos et al explored the electronic properties of PtX 2 (X = S, Se and Te) with respect to their film thickness, all the Pt-based transition metal dichalcogenides (TMDs) exhibit the decreasing or closing of bandgap with their increasing thickness [23].…”
Section: Introductionmentioning
confidence: 99%
“…With each band alignment holding a different application for the preparation of different optoelectronic devices, it is desirable to construct heterostructures with tunable optoelectronic properties, especially the tunable band alignment. Up to now, a considerable amount of strategies has been carried out on the investigation of band alignment and band structure engineering such as doping method [17,18], external strains [19], interlayer distance modulation [20], external electric field [21,22] and so on. Very recently, Villaos et al explored the electronic properties of PtX 2 (X = S, Se and Te) with respect to their film thickness, all the Pt-based transition metal dichalcogenides (TMDs) exhibit the decreasing or closing of bandgap with their increasing thickness [23].…”
Section: Introductionmentioning
confidence: 99%