2020
DOI: 10.1038/s41567-020-0953-2
|View full text |Cite
|
Sign up to set email alerts
|

Tunable strain soliton networks confine electrons in van der Waals materials

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

4
59
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6
1
1

Relationship

0
8

Authors

Journals

citations
Cited by 73 publications
(63 citation statements)
references
References 31 publications
4
59
0
Order By: Relevance
“…Furthermore, we study the localization of the wave functions corresponding to these flat bands. The wave functions localize at different stackings compared to twisted TMDs, and our results are in excellent agreement with recent spectroscopic experiments [1].…”
supporting
confidence: 92%
See 1 more Smart Citation
“…Furthermore, we study the localization of the wave functions corresponding to these flat bands. The wave functions localize at different stackings compared to twisted TMDs, and our results are in excellent agreement with recent spectroscopic experiments [1].…”
supporting
confidence: 92%
“…Most of the studies so far focus on the emergence of flat-electronic bands due to the moiré pattern formation from twisting and from stacking two dissimilar materials. A recent experiment, however, suggests that electrons can be efficiently trapped in strain engineered moiré pattern in TMDs [1]. This hints at the formation of flat-electronic bands in such systems.…”
Section: Introductionmentioning
confidence: 98%
“…where local matrix elements are defined as in Eqs. ( 18) and (20). For the full range of twist angles, the valence band edge at K lies more than 50 meV higher than that at the point across a moiré supercell; see Fig.…”
Section: A Valence-band-edge Modulation At the And K Pointsmentioning
confidence: 91%
“…Moiré superlattices induce a plethora of physical effects, such as long-range interlayer hybridization, leading to flat minibands with strongly correlated electronic states [2][3][4][5][6][7][8][9][10] and minibands for excitons in transition metal dichalcogenide (TMD) bilayers [11,12] at twist angles θ 10 • , for which the moiré periodicity exceeds the exciton Bohr radius, thus affecting the system's optoelectronic properties [13][14][15][16][17]. Moreover, piezoelectric effects caused by lattice reconstruction in TMD bilayers [1,18,19] create periodic traps for charge carriers [20,21] and excitons [22], whereas interlayer charge transfer [23,24] induces ferroelectric polarization in these structures [25][26][27].…”
Section: Introductionmentioning
confidence: 99%
“…Recent work analyzing the transient spectral response of excitons in GaAs to incident solitons (Scherbakov et al, 2007) has shown definitively an electronic-soliton coupling is present in this common device material. Recent investigations in 2D materials (Alden et al, 2013;Edelberg et al, 2020) have shown that static strain solitons form under certain conditions related to twisted van der Waals stacking patterns. These static solitons could be used to confine electronic states and one can consider dynamic soliton trains and the interaction between static and dynamic solitons may be sufficient to manipulate the charge states in novel device schemes.…”
Section: Discussionmentioning
confidence: 99%