Tunable THz source based on intracavity parametric down-conversion in quasi-phase-matched GaAs

Schaar, Joseph E.; Vodopyanov, Konstantin L.; Kuo, Paulina S.; Fejer, M. M.; Lin, A.; Yu, Xiaojun; Harris, James S.; Bliss, D.; Lynch, C.; Kozlov, V. G.; Hurlbut, Walter C.

doi:10.1109/cleo.2008.4551666

Cited by 2 publications

(4 citation statements)

References 6 publications

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“…For GaAs, techniques have been developed to solve the phase matching problem such as form-birefringence23; out of plane pumping24; or quasi-phase matching by traditional periodic crystal inversion25. Further, out of plane pumping has the benefit of producing counter-propagating entangled photons26.…”

Section: Discussionmentioning

confidence: 99%

Inherent polarization entanglement generated from a monolithic semiconductor chip

Horn

Kolenderski

Kang

et al. 2013

Sci Rep

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Creating miniature chip scale implementations of optical quantum information protocols is a dream for many in the quantum optics community. This is largely because of the promise of stability and scalability. Here we present a monolithically integratable chip architecture upon which is built a photonic device primitive called a Bragg reflection waveguide (BRW). Implemented in gallium arsenide, we show that, via the process of spontaneous parametric down conversion, the BRW is capable of directly producing polarization entangled photons without additional path difference compensation, spectral filtering or post-selection. After splitting the twin-photons immediately after they emerge from the chip, we perform a variety of correlation tests on the photon pairs and show non-classical behaviour in their polarization. Combined with the BRW's versatile architecture our results signify the BRW design as a serious contender on which to build large scale implementations of optical quantum processing devices.

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Section: Discussionmentioning

confidence: 99%

Inherent polarization entanglement generated from a monolithic semiconductor chip

Horn

Kolenderski

Kang

et al. 2013

Sci Rep

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“…OP GaAs crystals for QPM nonlinear optics devices are done on template seeds with crystallographic orientation modulation (2,(4)(5)(6)(7). Orientation-patterned templates are prepared by molecular beam epitaxy (MBE) (2,8).…”

Section: Experimental and Samplesmentioning

confidence: 99%

“…Orientation-patterned templates are prepared by molecular beam epitaxy (MBE) (2,8). A Ge (non polar semiconductor) layer is deposited on a vicinal GaAs (polar semiconductor) substrate (tilted 4º towards the {111}B face); a GaAs layer is then deposited by MBE under selective growth deposition conditions, in order to deposit a GaAs layer with reversed orientation with respect to the GaAs substrate.…”

Section: Experimental and Samplesmentioning

confidence: 99%

“…In spite of this technological interest, mid-IR laser sources are scarcely available. Among the more attractive candidates for those laser sources, the non linear optical conversion by quasi-phase matching (QPM) with GaAs crystals is taking a significant role (1,2). The high non linear optical coefficient of GaAs makes it an ideal candidate as a mid-IR material, as it is transparent in the spectral window of interest (0.9-17 m).…”

Section: Introductionmentioning

confidence: 99%

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Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals

et al. 2012

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Orientation patterned (OP)-GaAs crystals are attractive materiasl for mid-infrared and terahertz lasers sources, using non linear optics frequency conversion from shorter wavelength sources. The optical propagation losses are critical to the fabrication of these sources; among the causes of optical losses the generation of defects and the incorporation of impurities must play a relevant role. The control of the incorporation of impurities and defects is, therefore, crucial to improve the performance of the OP-GaAs crystals as non linear optical materials. We present herein a cathodoluminescence (CL) analysis of OP-GaAS crystals intentionally doped with Si, in order to understand the incorporation paths of Si in the OP-GaAs crystals.

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Tunable THz source based on intracavity parametric down-conversion in quasi-phase-matched GaAs

Cited by 2 publications

References 6 publications

Inherent polarization entanglement generated from a monolithic semiconductor chip

Inherent polarization entanglement generated from a monolithic semiconductor chip

Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals

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