Tunable transmission due to defects in zigzag phosphorene nanoribbons

Amini, Mohsen; Soltani, Mohsen; Ghanbari-Adivi, Ebrahim; Sharbafiun, M.

doi:10.1209/0295-5075/125/67001

Cited by 9 publications

(3 citation statements)

References 30 publications

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“…Although the presence of this edge state conductance band within the energy band gap suggests the use of this structure in thermoelectricity, the width of this conductance channel is not suitable for thermoelectric devices operating at assumed temperatures. In order to tune the width of this conductance band, we assume that an on-site potential is localized at lower edge of the bismuth nanoribbon [39]. According to figure 1, there are two different site families in two edges of the bismuth nanoribbon, namely A and B.…”

Section: Resultsmentioning

confidence: 99%

Thermoelectric power generation efficiency of zigzag monolayer nanoribbon of bismuth

et al. 2020

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The thermoelectric power generation efficiency of a bismuth monolayer nanoribbon has been studied theoretically. We calculate the conductance of such a structure using the multi-orbital tight-binding model and also recursive Green’s function method, in the presence of a substrate and on-site potential. For the case of the substrate-supported bismuth nanoribbon and by proper selection of on-site potential, a boxcar shape conductance in terms of energy has been obtained. Using the Landauer–Büttiker formalism in the non-linear response regime, we calculate heat and charge currents at low temperatures. By calculation of the electrical output power and power conversion thermoelectric efficiency, we have illustrated that such a structure can operate at high thermoelectric efficiency and also a considerable power generation rate.

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Section: Resultsmentioning

confidence: 99%

Thermoelectric power generation efficiency of zigzag monolayer nanoribbon of bismuth

et al. 2020

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“…Although there are no transport modes inside the gap, the in-gap defect states can affect the system's conductivity via vacancy scattering 20,36 . This is shown in Figs.…”

Section: Effect Of Vacanciesmentioning

confidence: 99%

Hall and bend resistance of a phosphorene Hall bar

et al. 2021

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The dependence of the Hall and bend resistances on a perpendicular magnetic field and on vacancy defects in a four-terminal phosphorene single layer Hall bar is investigated. A tight-binding model in combination with the Landauer-Büttiker formalism is used to calculate the energy spectrum, the lead-to-lead transmissions, and the Hall and bend resistances of the system. It is shown that the terminals with zigzag edge orientation are responsible for the absence of quantized plateaus in the Hall resistance and peaks in the longitudinal resistance. A negative bend resistance in the ballistic regime is found due to the presence of highi-and low-energy transport modes in the armchair and zigzag terminals, respectively. The system density of states, with single vacancy defects, shows that the presence of in-gap states is proportional to the number of vacancies. Quantized plateaus in the Hall resistance are only formed in a sufficiently clean system. The effects of different kinds of vacancies where the plateaus are destroyed and a diffusive regime appears in the bend resistance are investigated.

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“…21 Due to their edge states, pristine zPNRs have an isolated band in the middle of the band gap. 22 The edge states of pristine zPNRs can be eliminated from the band gap via hydrogen passivation. 23,24 Defects, both intrinsic and extrinsic, are inevitably present in phosphorene.…”

Section: Introductionmentioning

confidence: 99%