Tunable Transport Gap in Phosphorene

Das, Saptarshi; Zhang, Wei; Demarteau, M.; Hoffmann, A.; Dubey, Madan; Roelofs, Andreas

doi:10.1021/nl5025535

Cited by 712 publications

(668 citation statements)

References 23 publications

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“…Note that a more efficient control of the BP channel can be achieved by employing a thinner dielectric which helps reduce the charge screening length. [35] The inset figure depicts the same curve in linear scale, from which a field effect hole mobility of 100 cm 2 V −1 s −1 was deduced by using the conventional equation Figure 2b. It is observable that rectifying effect appears for a certain V g range between 10 and 40 V (see Section SI, Supporting Information, for more details).…”

Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 96%

“…[36,37] In comparison, a layer number of 11 will result in BP's bandgap below 0.4 eV, [34] www.advelectronicmat.de difference of BP sheets with similar thickness difference has also been revealed from electrical transport measurement. [35] This difference in a heterojunction is likely to give rise to an obvious current rectification behavior. [28] As for the V g dependence, briefly, when V g has a large enough negative value, both the regions (of different layer numbers) of the device are electrostatically modulated into heavy p-type forming a p + -p + junction.…”

Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 99%

“…Concerning the electrodes at source and drain ends, due to the large hole concentrations in both flakes and the consequential thinner barrier lengths, holes can be easily injected into the semiconductor through thermionic emission as well as thermally assisted tunneling process. [35] Therefore, the device shows no obvious current rectification. Regarding the evident rectifying behavior in the 10-30 V V g range, it can be explained by the combined effect of the BP hetero interface and Schottky contacts.…”

Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 99%

“…This will result in a relatively higher contact barrier at the source end, giving rise to a less effective injection of holes into the flake. [35,38] Further increase of V g results in degradation of rectifying behavior (rectifying ratio decreases) because the electron conduction is no longer negligible and electron injection is easier at the drain end. This can also help explain the reverse of rectifying direction when both flakes enter into the heavy electron doping regime.…”

Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 99%

See 3 more Smart Citations

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

Wang

Huang

Tan

et al. 2017

Adv Elect Materials

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complicated split-gates structure and suffer from nonabrupt junction interface due to the divergence of static electric field, limiting their practical applications. 2D lateral homojunctions can be achieved by selective chemical doping as well, as in few-layer MoS 2 [7] and BP cases. [17,18] In addition to homojunctions, heterojunctions have recently been under intense study to extend further the frontiers of 2D materials for electronic and optoelectronics. Particularly, by vertically stacking together flakes of different 2D materials, the so-called van der Waals heterojunction is formed which gathered extensive attention by offering a vast number of candidate structures for high-performance optoelectronic applications. [3,8,11,15,19,20] Nevertheless, the construction of this structure usually requires a dry/wet transfer technique that complicates the fabrication process. [21] Besides, it also tends to suffer from contaminants and bubbles introduced during the transfer, resulting in unwanted defects at the interface. [11] In contrast to vertical heterojunctions, lateral heterojunctions composed of p-and n-type TMDCs semiconductors are also explored where disparate materials can be grown along the edges of the previously grown flakes in the epitaxy process. [22][23][24] Yet, this strategy is severely challenged by the control of large-area uniform growth and the high yield of clean junction interface. As well known, an inherent nature of 2D materials is their thickness-(or layer-number-) dependent bandgaps. [25] Such dependence implies energy bands discontinuities at the interface of different-layer-number films, forming spontaneously a lateral heterojunction distinct from the conventional ones. [26][27][28][29] The study on this kind of structure is likely to expand the realms of 2D materials diverse applications but few works have been done. [26,28,29] Recently, few-layer black phosphorus has been rediscovered as a novel promising 2D semiconductor for nextgeneration nanoelectronic and optoelectronic devices due to its direct bandgap, ambipolar conduction, anisotropic nature, and a high field-effect hole mobility. [30][31][32][33] Especially, BP has a largely adjustable direct thickness-dependent bandgap ranging from 2.0 eV for monolayer to 0.3 eV for its bulk form, [34] which bridges the bandgap space between gapless graphene and large gap TMDCs by covering the mid-infrared to near-infrared wavelengths, leading to new electronic and optoelectronic devices. [33] In this work, we experimentally demonstrate a gate-tunable all-BP lateral heterojunction diode with thickness-induced bandgap difference for high-performance photovoltaic application, Recently, both lateral and vertical p-n junctions have been realized in 2D materials using various strategies, with a number of works on exploring the potential of lateral heterojunctions resulting from thickness-modulated bandgaps at the interface. Here, electrically tunable all-black-phosphorus (BP) lateral heterojunction diodes, without the need of split-gating or sele...

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Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 96%

Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 99%

Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 99%

Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 99%

See 2 more Smart Citations

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

Wang

Huang

Tan

et al. 2017

Adv Elect Materials

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show abstract

“…A characteristic feature of black phosphorus is that an electron-hole current asymmetry can be induced by modifying the number of layers [5]. Alternatively, other methods based on the chemical and structural modification of the phosphorus network could be employed to purposely tune its electronic band gap or explain its experimentally measured low mobility.…”

Section: Quantum Transport Properties Of Hydrogenated Phosphorene Ribmentioning

confidence: 99%

Effect of atomic-scale defects and dopants on phosphorene electronic structure and quantum transport properties

López-Bezanilla

2016

Phys. Rev. B

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By means of a multi-scale first-principles approach, a description of the local electronic structure of two-dimensional and narrow phosphorene sheets with various types of modifications is presented. Firstly, a rational argument based on the geometry of the pristine and modified P network, and supported by the Wannier functions formalism is introduced to describe a hybridization model of the P atomic orbitals. Ab initio calculations show that non-isoelectronic foreign atoms form quasibound states at varying energy levels and create different polarization states depending on the number of valence electrons between P and the doping atom. The quantum transport properties of modified phosphorene ribbons are further described with great accuracy. The distortions on the electronic bands induced by the external species lead to strong backscattering effects on the propagating charge carriers. Depending on the energy of the charge-carrier and the type of doping, the conduction may range from the diffusive to the localized regime. Interstitial defects at vacant sites lead to homogeneous transport fingerprints across different types of doping atoms. We suggest that the relatively low values of charge mobility reported in experimental measurements may have their origin in the presence of defects.

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