Tunable, Ultralow‐Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene–Oxide Interface

Abstract

Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.

A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy

“…A sharp turn-on slope of ≈5 mV dec −1 is observed wherein the super nonlinearity implies its versatility to be used as a twoterminal selector in a 3D stack with memristor to suppress sneak current. [13,14,16,[36][37][38][39][40][41][42][43] It is noted that a larger CC during the set process might produce a larger and more stable conductive filament, thus a larger reset voltage and reset current is required. The first sweep highlighted as red indicates the forming-free process.…”

2D Layered Materials for Memristive and Neuromorphic Applications

“…[53] Copyright 2014, John Wiley & Sons, Inc. b) Reproduced with permission. [53] Copyright 2014, John Wiley & Sons, Inc. b) Reproduced with permission.…”

“…[42][43][44][45] The unique properties that 2D materials and vdW heterostructures exhibit may be utilized to solve the aforementioned issues faced by conventional memristive devices. [53] Due to high electron-density induced by sp 2 hybridized carbon atoms and strong in-plane covalent atomic structure, almost all molecules and ions are impermeable across graphene. The low density of state (DOS) in the graphene effectively suppresses operating current flowing through the devices and reduces power consumption.…”

A selector device based on graphene–oxide heterostructures for memristor crossbar applications

“…Its applications in electronic devices have been extensively investigated in the last decade [24] due to its amazing properties such as high charge-carrier mobility [25], unique energy band structure [26], and excellent mechanical strength [27]. In previous studies, graphene has been proposed to replace conventional metals as a novel electrode material, where interesting threshold switching [28] and lower power consumption behaviors [29] were observed.Here, we report a selector device based on a Au/ TiO x /graphene/TiO x /Au structure. By connecting it in series with a Pt/TaO x /Ta memristor, we establish a oneselector one-memristor (1S1M) cell which successfully converts the linear Pt/TaO x /Ta memristor into a nonlinear device.…”

“…Its applications in electronic devices have been extensively investigated in the last decade [24] due to its amazing properties such as high charge-carrier mobility [25], unique energy band structure [26], and excellent mechanical strength [27]. In previous studies, graphene has been proposed to replace conventional metals as a novel electrode material, where interesting threshold switching [28] and lower power consumption behaviors [29] were observed.…”