Tunable wavelength hot electron light emitter

Balkan, N.; Teke, Ali; Gupta, R.; Straw, Andrew; Wolter, J.H.; Vleuten, W. van der

doi:10.1063/1.114700

Cited by 14 publications

(11 citation statements)

References 4 publications

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“…As a result, the intensity of re-emission from the quantum wells increases rapidly with increasing field for all samples. Electroluminesence and photoluminesence spectra of sample ES1 and a theoretical model developed to understand the device operation were published elsewhere [1,2]. These works, realizing a reasonable good agreement between experimental results and our model led us to increase the device performance by optimizing the structural parameters.…”

Section: Structures and Operation Principle Of Hellish-2supporting

confidence: 64%

“…A hot electron light emitter, HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterojunction-type 2) that can be operated in either single or multiple wavelength emission has been developed and reported by us [1,2]. In this paper, we present the electrical properties of HELLISH-2 and scattering process involved in device operation at low and high electric and magnetic fields by using standard Hall, SdH and I-V measurement techniques.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of a Hot Electron Light Emitting Device at Low and High Electric and Magnetic Fields

Teke

2001

phys. stat. sol. (a)

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The electrical characterization of a tunable wavelength surface light-emitting device is reported. The device consists of p-GaAs and n-Ga 1--x Al x As heterojunction containing an inversion layer on the p-side, and GaAs quantum wells on the n-side, and is referred to as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterojunction). We studied two HELLISH-2 devices by using standard Hall, SdH (Shubnikov de Haas) and high-speed I-V measurement techniques. 2D carrier density and transport mobility were obtained from standard Hall measurements and quantum lifetime and quantum mobility were determined from SdH measurements. A detailed analysis of the results has been performed to understand the scattering processes involved in device operation. We have concluded that a good knowledge of electrical parameters is important in order to optimize the device structures based on our model calculations.

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Section: Structures and Operation Principle Of Hellish-2supporting

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Analysis of a Hot Electron Light Emitting Device at Low and High Electric and Magnetic Fields

Teke

2001

phys. stat. sol. (a)

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“…Based on the function of the multi-energy supply shown in Figure 2, compound CAES is the core for building the structure of the CER to provide the energy optimization regulation and comprehensive Figure 2a-c shows the schematic view of the graphene free n-Si/HfO 2 (50 nm)/p-AlGaN LED, I-V characteristics of the LED, and EL chart of the LED. As shown in Figure 2a, in the n-Si/HfO 2 (50 nm)/p-AlGaN LED, the hot electrons accumulate at the interface of the n-Si/HfO 2 (50 nm) heterostructure under forward bias [28]. With a relatively larger thickness of the dielectric layer (50 nm, 90 nm), the electron tunneling mechanism will be marginal and the electron-impact ionization mechanism would be the prime contributor for the electron transfer through the dielectric layer.…”

Section: Compound Caesmentioning

confidence: 99%

“…With a relatively larger thickness of the dielectric layer (50 nm, 90 nm), the electron tunneling mechanism will be marginal and the electron-impact ionization mechanism would be the prime contributor for the electron transfer through the dielectric layer. nm)/p-AlGaN LED, the hot electrons accumulate at the interface of the n-Si/HfO2(50 nm) heterostructure under forward bias [28]. With a relatively larger thickness of the dielectric layer (50 nm, 90 nm), the electron tunneling mechanism will be marginal and the electron-impact ionization mechanism would be the prime contributor for the electron transfer through the dielectric layer.…”

Section: Compound Caesmentioning

confidence: 99%

Van der Waals Integrated Silicon/Graphene/AlGaN Based Vertical Heterostructured Hot Electron Light Emitting Diodes

Manjunath

Liu

et al. 2020

Nanomaterials

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Silicon-based light emitting diodes (LED) are indispensable elements for the rapidly growing field of silicon compatible photonic integration platforms. In the present study, graphene has been utilized as an interfacial layer to realize a unique illumination mechanism for the silicon-based LEDs. We designed a Si/thick dielectric layer/graphene/AlGaN heterostructured LED via the van der Waals integration method. In forward bias, the Si/thick dielectric (HfO2-50 nm or SiO2-90 nm) heterostructure accumulates numerous hot electrons at the interface. At sufficient operational voltages, the hot electrons from the interface of the Si/dielectric can cross the thick dielectric barrier via the electron-impact ionization mechanism, which results in the emission of more electrons that can be injected into graphene. The injected hot electrons in graphene can ignite the multiplication exciton effect, and the created electrons can transfer into p-type AlGaN and recombine with holes resulting a broadband yellow-color electroluminescence (EL) with a center peak at 580 nm. In comparison, the n-Si/thick dielectric/p-AlGaN LED without graphene result in a negligible blue color EL at 430 nm in forward bias. This work demonstrates the key role of graphene as a hot electron active layer that enables the intense EL from silicon-based compound semiconductor LEDs. Such a simple LED structure may find applications in silicon compatible electronics and optoelectronics.

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“…The first HELLISH devices were demonstrated in 1995 including HELLISH-1 [1] and HELLISH-2 [2]. These two devices were adapted and converted from an LED to an ultra-bright (UB) HELLISH [3] with the addition of a bottom DBR mirror grown below the active layers.…”

Section: Introductionmentioning

confidence: 99%

Gain characteristic of dilute nitride HELLISH‐VCSOA for 1.3 µm wavelength operation

Chaqmaqche

Mazzucato

Balkan

et al. 2013

Phys. Status Solidi C

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Optical amplification of more than 3 dB is demonstrated using the Hot Electron Light Emitting and Lasing Semiconductor Heterostructure device in a Vertical Cavity Semiconductor Optical Amplifier configuration (HELLISH‐VCSOA). The device consists of dilute nitride quantum wells Ga0.35In0.65N0.02As0.08/GaAs multiple quantum well (MQW) layers placed in the active region between the doped GaAs claddings and undoped GaAs/AlAs DBRs. Compared to standard VCSOAs in the HELLISH device, the current here does not flow across the distributed Bragg reflectors (DBR) but is injected longitudinally into the p‐ and n‐doped cladding layers. Therefore DBR layers can be undoped, and heating problems en countered in conventional VCSOAs can be avoided. Current‐voltage and spectral characteristics are measured at room temperature under different optical and electrical excitation conditions to demonstrate the possibility of employing this device for amplification purposes (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Tunable wavelength hot electron light emitter

Cited by 14 publications

References 4 publications

Analysis of a Hot Electron Light Emitting Device at Low and High Electric and Magnetic Fields

Analysis of a Hot Electron Light Emitting Device at Low and High Electric and Magnetic Fields

Van der Waals Integrated Silicon/Graphene/AlGaN Based Vertical Heterostructured Hot Electron Light Emitting Diodes

Gain characteristic of dilute nitride HELLISH‐VCSOA for 1.3 µm wavelength operation

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