A potential replacement for two-dimensional (2D)inorganic semiconductors in photocatalysis has developed quickly in the form of graphitic carbon nitride [g-C 3 N 4 (GCN)], a 2D-organic semiconductor; nevertheless, very few investigations have been conducted to date about its use in optoelectronic devices. In light of the demands of light-emitting diodes (LED) with effective injected carrier recombination, we propose the report on the fabrication of Bdoped exfoliated g-C 3 N 4 (BEGCN) with substantially altered optical/ electronic characteristics and a unique structural backbone and illustrate their potential applications in LED devices. The role of exploitation and boron incorporation toward modulating the optical properties of GCN was studied. BEGCN has very high photoluminescence (PL); EGCN and GCN exhibit vanishingly low PL and 2.67 and 2.73 eV smaller bandgap than BEGCN (E g = 2.81 eV) and manifest visibly white emission. An interesting electronic structure derived from the native defect states of hBN and π, π*, and n states of GCN is bestowed by the occurrence of these two distinct domain types in BEGCN nanosheets. The BEGCN nanosheets demonstrate distinctive optical features in PL emission, which makes the material incredible for the development of high-performance LEDs. The photocatalytic performance was also carried out to correlate the PL characteristics with light-induced RhB degradation of GCN (93%), EGCN (86%), and BEGCN (82%) within 180 min. Degradation efficiency decreased due to the boron incorporation, which directly affects the absorption of photons by creating a blocking effect between the catalyst surface and the light source. Next-generation light-emitting and display devices featuring exceptional luminescence stability may be possible with the construction of BEGCN nanosheets with doped EGCN and B-nanodomains and the emergence of outstanding light-emission properties.