2017
DOI: 10.1557/mrc.2017.37
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Tungsten disulfide thin film/p-type Si heterojunction photocathode for efficient photochemical hydrogen production

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Cited by 29 publications
(12 citation statements)
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“…There are simple solutions for wettability but because (NH 4 ) 2 WS 4 is weakly coordinated with most of the solvents 24 , the key challenge in making a solution-based uniform ultra-thin WS 2 film is formulating a solution recipe that results in a high solubility of the precursor with the optimum viscosity. Based on this, we chose the most promising solvents reported previously for spin coating, namely (DMF) 27 , ethylene glycol 26 , (NMP) 12 to investigate which one has the maximum solvation and coverage over the substrate.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…There are simple solutions for wettability but because (NH 4 ) 2 WS 4 is weakly coordinated with most of the solvents 24 , the key challenge in making a solution-based uniform ultra-thin WS 2 film is formulating a solution recipe that results in a high solubility of the precursor with the optimum viscosity. Based on this, we chose the most promising solvents reported previously for spin coating, namely (DMF) 27 , ethylene glycol 26 , (NMP) 12 to investigate which one has the maximum solvation and coverage over the substrate.…”
Section: Resultsmentioning
confidence: 99%
“…Although WS 2 has growth methods similar to MoS 2 such as sulphurization of tungsten metal 22 or tungsten oxides 23 , growth of large area and uniform WS 2 ultra-thin films for electronic applications via thermal decomposition of ammonium tetrathiotungstate (NH 4 ) 2 WS 4 salt has not been demonstrated successfully. This is due to the difficulty that is associated with the formation of a thin uniform (NH 4 ) 2 WS 4 precursor layer as this salt has poor solubility in most of the common solvents as compared with (NH 4 ) 2 MoS 4 24 . Usage of these solvents in solution-based single source precursor deposition of WS 2 has however been demonstrated for applications that do not require highly continuous WS 2 films, such as surface enhancement Raman scattering (SERS) and creating a carrier injector layer for optoelectronic devices 25,26 .…”
mentioning
confidence: 99%
“…More recently, Kwon et al achieved wafer-scale MoS 2 /p-Si and WS 2 /p-Si materials as efficient photocathodes for the PEC-HER. 94,95 In their study, the wafer-scale MoS 2 thin-film exhibited high transparency, which highly depended on the thickness of the thin film. These highly uniform MoS 2 nanosheets with controllable thickness were synthesized by a CVD process and transferred to the surface of p-Si using a wet transferring approach.…”
Section: Catalytic Properties Of Tmdsmentioning
confidence: 99%
“…Moreover, WS 2 can be utilized as a catalyst in WS 2 /p-type Si photo-cathode hetero-junctions. Kwon et al [ 238 ] examined WS 2 /p-Si photo-cathode for photo-catalytic based HER. Figure 18 a shows the as-prepared WS 2 thin film color changes from yellow to brown with increasing thickness, whereas absorbance of film regularly enhances.…”
Section: Photo-catalytic Applicationsmentioning
confidence: 99%