Tungsten induced defects control on BiVO4 photoanodes for enhanced solar water splitting performance and photocorrosion resistance

WO3 Photoanode with Predominant Exposure of {202} Facets for Enhanced Selective Oxidation of Glycerol to Glyceraldehyde

“…In recent years, metal oxides such as BiVO 4 , − TiO 2 , − and WO 3 − have been extensively studied as photoanodes in PEC water oxidation reaction . They display good oxidation abilities because of the low valence band position determined by the O 2p orbital .…”

Visible Light Photoanode Material for Photoelectrochemical Water Splitting: A Review of Bismuth Vanadate

“…Liu et al synthesized the BiVO 4 photoanode with a WO 3 /FTO substrate (W:BVO photoanode). 85 On the one hand, as an electron transport layer, the WO 3 film on the FTO substrate effectively promoted the transport of carriers; on the other hand, the contact between WO 3 and BiVO 4 made it possible for W to be incorporated into BiVO 4 during the annealing process, leading to the formation of OVs, and, thus, gave rise to an activation photoanode of W:BVO-O v . At 1.23 V versus RHE, the W:BVO−O v photoanode could deliver a photocurrent density of 4.4 mA cm −2 with the IPCE as high as 77.4%.…”

“…At 1.23 V versus RHE, the A–BiVO 4 /PdO photoanode exhibited a photocurrent density of 4.90 mA cm –2 and an IPCE up to 80% at 350 nm, meanwhile showing high stability (panels d–f of Figure ). Liu et al synthesized the BiVO 4 photoanode with a WO 3 /FTO substrate (W:BVO photoanode) . On the one hand, as an electron transport layer, the WO 3 film on the FTO substrate effectively promoted the transport of carriers; on the other hand, the contact between WO 3 and BiVO 4 made it possible for W to be incorporated into BiVO 4 during the annealing process, leading to the formation of OVs, and, thus, gave rise to an activation photoanode of W:BVO-O v .…”

A self-adaptive semiconductor–liquid junction for highly active and stable solar water splitting

“…6–8 Nevertheless, a bare BiVO 4 photoanode usually undergoes notorious charge recombination in the bulk and sluggish surface reaction kinetics along with serious photocorrosion at the semiconductor–liquid junction (SCLJ). 9,10 In the past few decades, a diversity of well-designed strategies, such as nanostructure construction, 11 crystal engineering, 12,13 element doping, 14,15 and heterojunction fabrication, 16,17 have been extensively demonstrated to be effective in overcoming the detrimental bulk recombination. Hitherto, a more intractable challenge has been to optimize the surface/interface of the photoanodes via constructing a highly active and stable SCLJ with an aim to accelerate the water oxidation reaction kinetics and inhibit photocorrosion.…”