Tungsten Oxide-Based Semiconductor Sensor Highly Sensitive to NO and NO2

Akiyama, Morito; Tamaki, Jun; Miura, Norio; Yamazoe, Noboru

doi:10.1246/cl.1991.1611

Cited by 278 publications

(116 citation statements)

References 4 publications

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“…4,6) Thermal decomposition and pyrolysis of tungsten salt are also common for preparation of the powder for gas sensor application. [7][8] For these methods, the powders are always subjected to heat treatment either during the synthesis step as in the case of thermal decomposition or pyrolysis, or post-synthesis step as in the case of wet chemical processes. Such heat treatment is important as it transforms the material into a desirable composition or crystalline structure.…”

Section: Introductionmentioning

confidence: 99%

Effect of SiO2 Doping on Growth Retardation of WO3 Nanoplate

Supothina

2007

JMMP

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Tungsten oxide (WO 3 ) is recently recognized as one of the most widely studied gas sensitive ceramics. To maintain good thermal stability at moderate operating temperature, the gas sensitive materials were typically heated at several hundreds degree Celsius. Such treatment caused grain growth, resulting to reduction of specific surface area which is considered to be one of the important properties determining gas sensor's performance. In this present work, grain growth of the WO 3 nanoplate was retarded by incorporation of silica (SiO 2 ) particle. To obtain homogeneous structure, the SiO 2 was incorporated by mixing tetraethyl orthosilicate into the W precursor during precipitation of the tungsten oxide. It was found that the SiO 2 dramatically retarded the particle growth, preserved the nanoplate structure, and resulted to more porous WO 3 powder. The effect was very significant when the powders were calcined at high temperatures.

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Section: Introductionmentioning

confidence: 99%

Effect of SiO2 Doping on Growth Retardation of WO3 Nanoplate

Supothina

2007

JMMP

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“…WO 3 has been extensively studied as a material suitable for NO 2 sensing (Chung et al, 1999;Jin et al, 2005) since it was shown that it indicated a higher sensitivity to NO 2 than to CO, H 2 , CH 4 , and i-C 4 H 10 (Akiyama et al, 1991). NO 2 sensors made of WO 3 nanowires have also been studied; the sensors made of nanowires formed by using thermal evaporation (Ponzoni et al, 2006) and solvothermal method (Rout et al, 2006) indicated high sensitivities to NO 2 in the range of parts per billion at high temperatures above 200°C.…”

Section: Wo 3 Nanowires Formed By Vapor Transportmentioning

confidence: 99%

Formation of Oxide Nanowires by Thermal Evaporation and Their Application to Gas Sensors

Yamazaki¹

2011

Nanowires - Implementations and Applications

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“…(7)(8)(9)(10)(11) Among the metal oxides, n-type tungsten oxide (WO 3 ) appears to be a promising material for use in a NO gas sensor. (8,9) In a previous publication, we reported on the reliable response of a p-type cobalt oxide (Co 3 O 4 ) gas sensor to NO gas at 0.5-5 ppm in air. (10) Furthermore, because that Co 3 O 4 gas sensor showed a low resistance of below 1 kΩ, the peripheral circuit used to measure the sensor resistance does not require a large resistance, reducing the device cost.…”

Section: Introductionmentioning

confidence: 99%

Effect of Noble Metal Addition on Co3O4-Based Gas Sensors for Selective NO Detection

2016

Sensors and Materials

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Keywords: oxide, semiconductor, noble metal, transmission electron microscopy, gas sensor P-type semiconductor-based gas sensors have been fabricated for the selective detection of 50-200 ppb nitric oxide (NO). To fabricate the sensors, cobalt oxide (Co 3 O 4 ) powders containing a noble metal (Pd, Ag, Pt, or Au) at 10 wt% were prepared by a colloidal mixing method and deposited on interdigitated Pt electrodes. The sensing responses to 50 and 200 parts per billion (ppb) NO and 25 and 100 parts per million (ppm) H 2 in air were investigated. The sensors with 10 wt% Pd, Ag, Pt, or Au loaded on the Co 3 O 4 powder demonstrated a greater response to NO than Co 3 O 4 with no noble metal content. The addition of Ag was found to suppress the H 2 response, a phenomenon that is attributed to the surface modification effects of Ag on the Co 3 O 4 surface. Furthermore, the sensor with 5 wt% Pd and 5 wt% Ag loaded on the Co 3 O 4 showed a high response in the presence of 50 ppb NO, as well as good selectivity against H 2 .

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Tungsten Oxide-Based Semiconductor Sensor Highly Sensitive to NO and NO2

Cited by 278 publications

References 4 publications

Effect of SiO2 Doping on Growth Retardation of WO3 Nanoplate

Effect of SiO2 Doping on Growth Retardation of WO3 Nanoplate

Formation of Oxide Nanowires by Thermal Evaporation and Their Application to Gas Sensors

Effect of Noble Metal Addition on Co3O4-Based Gas Sensors for Selective NO Detection

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