Tungsten silicide formation from sequentially sputtered tungsten and silicon films

Molarius, Jyrki; Franssila, Sami; Drozdy, G.; Saarilahti, Jaakko

doi:10.1016/0169-4332(91)90290-z

Cited by 10 publications

(3 citation statements)

References 15 publications

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“…Molarius et al 9 studied the tungsten silicide formation induced by rapid thermal annealing of crystalline W/Si ML's. They observed the tetragonal WSi 2 phase after annealing at 700 °C, which was inhibited by the presence of oxygen at the W/Si interfaces.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization and thermal stability of W/Si multilayers

Brunel¹,

Enzo²,

Jergel

et al. 1993

J. Mater. Res.

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Tungsten/silicon multilayers with tungsten layers of a thickness of 1-2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio <5w/5s; = 1, whereas tetragonal WSi 2 was detected in tungsten/silicon multilayers with a layer thickness ratio of 5 w / 5 S i ** 0.25. This dependence of the crystallization products on the layer thickness ratio <5 w /5 S i originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

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Section: Introductionmentioning

confidence: 99%

Structural characterization and thermal stability of W/Si multilayers

Brunel¹,

Enzo²,

Jergel

et al. 1993

J. Mater. Res.

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“…The single-crystal substrates were used as reference standards for silicidation. These metals have been shown in previous studies to produce silicides at 750°C and below [1,2,3].…”

Section: Introductionmentioning

confidence: 89%

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

Sarcona

Hatalis

1995

MRS Proc.

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Thin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250'C to 750'C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 f2l/ were formed at 600'C. Nickel produced films with sheet resistance below 10 f2/0 at 350'C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

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“…Recently, it has also been used as structural material for MEMS devices such as pressure sensors (Fujimori et al 2007). WSi films have been prepared by many methods, for example, the reaction of a W thin film with Si at elevated temperatures (Siegal et al 1989), chemical vapor deposition (Pauleau et al 1989), deposition of W and Si by co-sputtering (Molarius et al 1991), or sputtering of WSi x (Washidzu et al 1991).…”

Section: Introductionmentioning

confidence: 99%

Measurement of mechanical and thermal properties of co-sputtered WSi thin film for MEMS applications

et al. 2010

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In this study, mechanical and thermal properties of the co-sputtered tungsten silicide (WSi) thin film were evaluated to consider the possibility of its use in MEMS applications. WSi film was prepared by cosputtering and basic micromachining processes, and its mechanical and thermal properties such as Young's modulus, temperature coefficient of resistance (TCR), strain gauge factor, coefficient of thermal expansion (CTE) and thermal stress were studied. The measurement method was simple and efficient since only one test pattern was used for all measurements. At room temperature, the TCR, gauge factor, CTE and thermal stress were measured to be -670 ppm/°C, 2.8, 32 ppm/°C and 1.76 GPa, respectively. The dependence of these coefficients on temperature was also evaluated experimentally.

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Tungsten silicide formation from sequentially sputtered tungsten and silicon films

Cited by 10 publications

References 15 publications

Structural characterization and thermal stability of W/Si multilayers

Structural characterization and thermal stability of W/Si multilayers

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

Measurement of mechanical and thermal properties of co-sputtered WSi thin film for MEMS applications

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