Tuning anisotropic electronic transport properties of phosphorene via substitutional doping

Guo, Caixia; Xia, Congxin; Fang, Liang; Wang, Tianxing; Liu, Yufang

doi:10.1039/c6cp04508a

Cited by 38 publications

(19 citation statements)

References 41 publications

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“…8(c) for impurities located on the edge, we find that the nearly degenerated edge states are separated [see the (orange) solid line] due to the variation of the on-site energies, but the other subbands remain unchanged. This is consistent with the result obtained by the first-principles calculation [57,58]. On the contrary, comparing Fig.…”

Section: Numerical Results and Discussionsupporting

confidence: 92%

Width Dependent Two-Photon Absorption in Monolayer Black Phosphorus Nanoribbons

et al. 2019

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We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a N-ZPNR with N number of transverse zigzag atomic chains, and classify the eigenstates according to the lattice symmetry. We then obtain the optical transition selection rule of ZPNRs based on the symmetry analysis and the analytical expressions of the optical transition matrix elements. Under an incident light linearly-polarized along the ribbon, importantly, we find that the optical transition selection rule for the N-ZPNR with even-or odd-N is qualitatively different. In specification, for even-N ZPNRs the inter-(intra-) band selection rule is ∆n =odd (even), since the parity of the wavefunction corresponding to the nth subband in the conduction (valence) band is (−1) n [(−1) (n+1) ] due to the presence of the C 2x symmetry. In contrast, all optical transitions are possible among all subbands due to the absence of the C 2x symmetry. Our findings provide a further understanding on the electronic states and optical properties of ZPNRs, which are useful in the explanation of the optical experiment data on ZPNR samples. *

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Section: Numerical Results and Discussionsupporting

confidence: 92%

Width Dependent Two-Photon Absorption in Monolayer Black Phosphorus Nanoribbons

et al. 2019

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“…Finally, we would like to point out that there are many theoretical studies on the NDR behavior in PNRs 39 , 40 , 44 , but the relative experimental studies are still missing. Recently, shim et al .…”

Section: Discussionmentioning

confidence: 99%

“…revealed nonlinear current-voltage behaviors and the NDR in a homostructured device based on zigzag PNR 39 , but the current peak-to-valley ratios are also not excess of the order of 10 2 . In addition, our previous works found that the NDR behaviors can be observed in the C, Si, Ge-doped phosphorene monolayer with obvious anisotropic 40 . Peng et al .…”

Section: Introductionmentioning

confidence: 92%

Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation

Guo

Wang

Xia

et al. 2017

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The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (105–108) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.

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“…Furthermore, electrical properties vary from the doping atoms. Taking BP as an example, isovalent doping retains anisotropic transport properties and semiconducting characteristics, while group IV A and VI A atoms doping would generate metallic properties . Additionally, Zhang and co‐workers studied electrical properties of the BP systems doped within the fourth‐period main group elements through first‐principles calculations .…”

Section: Ass‐induced Property Tuningmentioning

confidence: 99%

Atomic‐Scale Structural Modification of 2D Materials

et al. 2019

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2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic‐scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic‐scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic‐scale structural modification of 2D materials toward functional applications.

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Tuning anisotropic electronic transport properties of phosphorene via substitutional doping

Cited by 38 publications

References 41 publications

Width Dependent Two-Photon Absorption in Monolayer Black Phosphorus Nanoribbons

Width Dependent Two-Photon Absorption in Monolayer Black Phosphorus Nanoribbons

Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation

Atomic‐Scale Structural Modification of 2D Materials

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