2021
DOI: 10.1103/physrevmaterials.5.104603
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Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

Abstract: We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in elect… Show more

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Cited by 16 publications
(4 citation statements)
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References 36 publications
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“…The formation of heterojunctions is a complex process, and includes factors such as the orientations of the crystal, the surface preparation, and the presence of defects and impurities [ 25 , 26 ]. Thus, it is hypothesized that the change is due to oxidation [ 27 , 28 ]. Having a thicker native layer affects the material’s VBO and CBO, leading to a change in the alignment.…”
Section: Resultsmentioning
confidence: 99%
“…The formation of heterojunctions is a complex process, and includes factors such as the orientations of the crystal, the surface preparation, and the presence of defects and impurities [ 25 , 26 ]. Thus, it is hypothesized that the change is due to oxidation [ 27 , 28 ]. Having a thicker native layer affects the material’s VBO and CBO, leading to a change in the alignment.…”
Section: Resultsmentioning
confidence: 99%
“…This work function difference (0.4 eV) is expected to introduce a Schottky barrier at the interface. The charged V O can result in the pinning of the Fermi level and/or lowering of the barrier height 45 , 46 , affecting the transport across the interface. The analysis of the I-V curves measured during in-situ STEM biasing experiments (Supplementary Fig.…”
Section: Resultsmentioning
confidence: 99%
“…This will certainly depend on the experimental conditions and oxygen chemical potential. However, in the case of a SrO interface (as sketched in Figure ), the configuration without dimers (Figure b, as reported in ref ) is only an unstable stationary point, and the stable configuration corresponds to a Si surface keeping dimer rows (Figure a), as previously reported by Zhang et al and Chrysler et al This stable structure is expected from the previous discussions since the ability to open Si dimers relies on the capacity of Sr to provide electrons to Si. In this case, Sr interfacial atoms will preferably provide electrons to O, much more electronegative, rather than to Si.…”
Section: Resultsmentioning
confidence: 99%