Tuning coercive force by adjusting electric potential in solution processed Co/Pt(111) and the mechanism involved

Chang, Cheng Hsun Tony; Kuo, Wei Hsu; Chang, Yu Pei; Tsay, Jyh-Jong; Yau, Shueh Lin

doi:10.1038/srep43700

Cited by 11 publications

(3 citation statements)

References 64 publications

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“…The Kerr loops shown in Figure 2 reveal that the perpendicular magnetic anisotropy increases with decreasing ambient temperature. Assuming that factors such as defects and dislocations, which would influence the pinning sites in domain wall motion, can be neglected, the coercivity

and the magnetic anisotropy energy

have an approximate simple relation:

[ 39 ], which is consistent with the report by the ferromagnetic resonance [ 40 ]. By combining this with the relationship given by Equation (2), one can obtain a relation of

.…”

Section: Resultssupporting

confidence: 66%

Fluence and Temperature Dependences of Laser-Induced Ultrafast Demagnetization and Recovery Dynamics in L10-FePt Thin Film

et al. 2023

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The fundamental mechanisms of ultrafast demagnetization and magnetization recovery processes in ferromagnetic materials remain incompletely understood. The investigation of different dynamic features which depend on various physical quantities requires a more systematic approach. Here, the femtosecond laser-induced demagnetization and recovery dynamics in L10-Fe0.5Pt0.5 alloy film are studied by utilizing time-resolved magneto-optical Kerr measurements, focusing on their dependences of excitation fluence and ambient temperature over broad ranges. Ultrafast demagnetization dominated by Elliott-Yafet spin-flip scattering, and two-step magnetization recovery processes are found to be involved in all observations. The fast recovery time corresponding to spin–lattice relaxation is much shorter than that of many ferromagnets and increase with excitation fluence. These can be ascribed to the strong spin–orbit coupling (SOC) demonstrated in FePt and the reduction of transient magnetic anisotropy, respectively. Surprisingly, the demagnetization time exhibits no discernible correlation with ambient temperature. Two competitive factors are proposed to account for this phenomenon. On the other hand, the spin–lattice relaxation accelerates as temperature decreases due to enhanced SOC at lower ambient temperature. A semiquantitative analysis is given to get a visualized understanding. These results offer a comprehensive understanding of the dynamic characteristics of ultrafast demagnetization and recovery processes in iron-based materials with strong SOC, highlighting the potential for regulating the magnetization recovery process through temperature and laser fluence adjustments.

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and the magnetic anisotropy energy

have an approximate simple relation:

[ 39 ], which is consistent with the report by the ferromagnetic resonance [ 40 ]. By combining this with the relationship given by Equation (2), one can obtain a relation of

.…”

Section: Resultssupporting

confidence: 66%

Fluence and Temperature Dependences of Laser-Induced Ultrafast Demagnetization and Recovery Dynamics in L10-FePt Thin Film

et al. 2023

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“…The phase change memory (PCM) [3][4][5][6][7][8], resistive random access memory (ReRAM) [9][10][11] or magnetoresistive random access memory (MRAM) [12][13][14][15][16][17][18][19][20][21][22][23][24][25] have the highest possibilities to be a warm storage devices. For example, there is an approach for making energy-efficient deep learning inference hardware by using PCM devices [3].…”

Section: Introductionmentioning

confidence: 99%

Self-assembled magnetic heterostructure of Co/DLC films

Chow¹,

Jiang²,

Chang³

et al. 2021

Nanotechnology

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In order to adapt to the quick and large amount of necessity in data flow for 5G cloud generation, it is necessary to develop a technology of warm storage device in market which takes a great balance between the reading/writing performance and the price per storage capacity. The technologies of warm storage devices are assumed to adopt phase change memory (PCM), resistive random access memory or magnetoresistive random access memory which have the highest possibilities to 5G structures and magnetic properties of Co on non-hydrogenated diamond like carbon (DLC)/Si (100) films and Co/DLC interface are investigated. The self-assembled magnetic heterostructure is firstly reported in hexagonal close packing Co layers perpendicular magnetic anisotropy (PMA) on Co carbide layers (in-plane) during Co deposited on DLC/Si(100). A PMA/in-plane magnetic heterostructure is expected to have the highest switching current to the energy barrier ratio of near 4 in previous report, which has great potential for developing warm memory devices. Based on these unique characteristics, we provide a novel design called magnetic anisotropy-phase change memory (Mani-PCM) which can impact the developing blueprint of memory. The working process of Mani-PCM includes in set, reset and read states as a universal PCM. This brand new technology is highly promising as warm memory devices including high reading/writing performance and economical price per storage capacity.

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“…Because of the interest in developing novel spintronic devices, explorations directed toward attempting to combine the charge and spin degrees of freedoms have increased dramatically 12–28 . Based on a successful combination of a solution process and the efficient control of the electric potential for magnetism, a novel concept of electric-potential-tuned magnetic recording has been developed, resulting in the development of stable recording media with a high degree of writing ability 20 . The formation of CoSi 2 compounds at the interface on a Si(111) surface occurs and the easy axis of magnetization of Co/Si films is canted out-of-plane due to interfacial effects 14 .…”

Section: Introductionmentioning

confidence: 99%

Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface

Chang

Jiang

Chow

et al. 2019

Sci Rep

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Compound formation at a metal/semiconductor interface plays crucial roles in the properties of many material systems. Applications of Ni silicides span numerous areas and have the potential to be used as new functionalities. However, the magnetic properties of ultrathin Ni layers on silicon surfaces and related chemical compositions at the interface are not fully understood and the influence of Ag additives on the reactivity of Ni/Si(111) remain unclear. We report herein on the fact that the dominant species produced at the interface is NiSi, which is produced by the spontaneous formation of strong bonds between Ni and Si atoms. Assuming that a Ni layer is formed over a NiSi layer with the total coverage as a constraint, we established a chemical shift-related concentration model that, in effect, represents a practical method for determining the amount of ultrathin Ni silicides that are produced at the buried interface. The formation of Ag-Si particles provide a viable strategy for enhancing silicide formation via a specific interaction transfer mechanism, even at room temperature. The mechanism is related to differences in the enthalpies of formation ΔH Ag-Si , ΔH Ni-Ag , and ΔH Ni-Si , for these phases and provides insights into strategies for producing ultrathin silicides at a buried interface.

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Tuning coercive force by adjusting electric potential in solution processed Co/Pt(111) and the mechanism involved

Cited by 11 publications

References 64 publications

Fluence and Temperature Dependences of Laser-Induced Ultrafast Demagnetization and Recovery Dynamics in L10-FePt Thin Film

Fluence and Temperature Dependences of Laser-Induced Ultrafast Demagnetization and Recovery Dynamics in L10-FePt Thin Film

Self-assembled magnetic heterostructure of Co/DLC films

Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface

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