Thin films of the organic semiconductor meso-diphenyl tetrathia[22]annulene[2,1,2,1] (DPTTA) have been prepared for first time employing solution-based techniques to fabricate organic field-effect transistors (OFETs). Homogeneous and crystalline films of this semiconductor have been achieved thanks to the synergic approach of employing blends of this material with polystyrene (PS) and the high throughput technique Bar-Assisted Meniscus Shearing (BAMS) with a hydrophobic bar. The resulting active layers exhibit state-of-the-art OFET performance with an average mobility of 1 cm 2 /V•s, threshold voltage close to 0 V, high on/off ratio and sharp switch on. Furthermore, a DPTTA:PS formulation has been optimized to prepare films suitable for their integration in electrolyte-gated field effect transistors (EGOFET) operating in ultrapure water and a 0.5 M NaCl aqueous solution. Such devices also reveal excellent performance with mobility values above 0.1 cm 2 /V•s, potentiometric sensitivity ~ 200 µV, time response ~ 9 ms and long term stability in ultrapure water. Hence, this work supports the strategy of combining organic semiconductor:polymer blends with BAMS as a powerful route for achieving high performing