2023
DOI: 10.1021/acsami.3c08470
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Tuning Electrical and Mechanical Properties of Metal–Organic Frameworks by Metal Substitution

Yabin Yan,
Chunyu Wang,
Zhengqing Cai
et al.
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Cited by 7 publications
(5 citation statements)
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“…In addition, the ELF at the O site is spherically asymmetric, inferring the directional bonding between the Co and O atoms. 40 Meanwhile, the ELF of M-3375 at the Co site exhibits small values, which might be attributed to the Co–O ionic interactions. On the other hand, the ELF distribution between the C and O atoms shows large values, indicating the covalent bonds between these atoms.…”
Section: Resultsmentioning
confidence: 97%
“…In addition, the ELF at the O site is spherically asymmetric, inferring the directional bonding between the Co and O atoms. 40 Meanwhile, the ELF of M-3375 at the Co site exhibits small values, which might be attributed to the Co–O ionic interactions. On the other hand, the ELF distribution between the C and O atoms shows large values, indicating the covalent bonds between these atoms.…”
Section: Resultsmentioning
confidence: 97%
“…Terahertz (THz, 1 THz = 10 12 Hz) waves, defined within the frequency range of 0.1-10 THz between microwave and infrared bands, have important applications in biochemical sensing, imaging, wireless communication, and radar [1][2][3][4][5]. With the development of THz technology, artificial microstructures have become a hot topic in recent research [6][7][8][9]. THz metasurfaces are electromagnetic structures with orderly arranged two-dimensional subwavelength unit elements.…”
Section: Introductionmentioning
confidence: 99%
“…25,26 Early DFT calculations using a semilocal exchange−correlation (XC) functional have classified MOF-5 as a semiconductor material, reporting an electronic band gap of around 3.6 eV. 12,27,28 Other ab initio calculations considering different XC hybrid functionals have reported band gaps between 4.6 and 5.0 eV. 26,29,30 Recently, many-body calculations have found that MOF-5 would be an insulator with an electronic band gap of around 8 eV and an optical band gap of 4.5 eV, exhibiting strong excitonic effects.…”
Section: ■ Introductionmentioning
confidence: 99%
“…33 The synthesis of stable MOF-5 doped with transition metals (V, Ti, Cr, Mn, and Fe) substituting Zn atoms has been previously reported. 28,34 In this context, it is demonstrated that metal doping induces redox reactivity, mediating reactions through electron transfer. In addition, Syzgantseva et al 15 have also considered metal doping and ligand functionalization as a strategy to modify MOF electronic structure, validated by experiments.…”
Section: ■ Introductionmentioning
confidence: 99%
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