Tuning electronic and magnetic properties of graphene by surface modification

Zhou, Jian; Wu, Miao; Zhou, Xiao; Sun, Qiang

doi:10.1063/1.3225154

Cited by 213 publications

(168 citation statements)

References 22 publications

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“…16 It has been hypothesized that a semihydrogenated version of graphene could be created via the blocking of a substrate, or the application of an external electric field, removing the hydrogen atoms from one side. 17 In this form, both ferromagnetic order 18 and a band gap opening 17 have been predicted due to the breaking of symmetry between hydrogen-bonded and nonbonded carbon atoms.…”

Section: Xejds Rswlfdo Frqgxfwlylw\ Lq Vhplk\gurjhqdwhg Judskhqhmentioning

confidence: 99%

Subgap optical conductivity in semihydrogenated graphene

Ang

Zhang

2011

Applied Physics Letters

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We report that for graphene with a finite band gap (such as semihydrogenated graphene or graphene with spin-orbit coupling), there exists a strong nonlinear optical response for energies lower than the band gap where the linear response is forbidden. At low temperatures, the nonlinear current in graphene with a gap is much stronger than that in gapless graphene. Our result suggests that semihydrogenated graphene can have a unique potential as a two-color nonlinear material in the terahertz frequency region. The relative intensity of the two colors can be tuned with the electric field.

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Section: Xejds Rswlfdo Frqgxfwlylw\ Lq Vhplk\gurjhqdwhg Judskhqhmentioning

confidence: 99%

Subgap optical conductivity in semihydrogenated graphene

Ang

Zhang

2011

Applied Physics Letters

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“…3(a) of the Ref. (Zhou et al, 2009b), strong -bonds are formed between C and H atoms and the -bonding network formed by p orbitals of the carbon ring is broken, leaving the electrons in the unhydrogenated C atoms localized and unpaired where spins come out. These spins decrease the band gap energy to 0.43 eV significantly (Zhou et al, 2009a(Zhou et al, , 2009b.…”

Section: The Adsorption Of Hydrogen On N-doped Graphenementioning

confidence: 99%

Hydrogenation of Graphene and Hydrogen Diffusion Behavior on Graphene/Graphane Interface

Ao¹,

Li²

2011

Graphene Simulation

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“…8,16 On the other hand, chairgraphone can be synthesized by selectively desorbing hydrogen from one side of graphane. 31,32 The hybridization of C atom changes from sp 2 to sp 3 upon hydrogenation and the planar structure of graphene becomes non-planar as depicted in Figure …”

Section: Introductionmentioning

confidence: 99%

Quasiparticle Band Gap Engineering of Graphene and Graphone on Hexagonal Boron Nitride Substrate

2011

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Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, graphene on hexagonal boron nitride (hBN) substrate provides potential system to overcome these challenges. Recent theoretical and experimental studies have provided conflicting results: while theoretical studies suggested a possibility of a finite bandgap of graphene on hBN, recent experimental studies find no bandgap. Using the first-principles density functional method and the many-body perturbation theory, we have studied graphene on hBN substrate. A Bernal stacked graphene on hBN has a bandgap on the order of 0.1 eV, which disappears when graphene is misaligned with respect to hBN. The latter is the likely scenario in realistic devices. In contrast, if graphene supported on hBN is hydrogenated, the resulting system (graphone) exhibits bandgaps larger than 2.5 eV. While the bandgap opening in graphene/hBN is due to symmetry breaking and is vulnerable to slight perturbation such as misalignment, the gra- * To whom correspondence should be addressed † Computational Center for Nanotechnology Innovations, Rensselaer Polytechnic Institute, Troy, NY 12180, USA ‡ Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA ¶ Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA phone bandgap is due to chemical functionalization and is robust in the presence of misalignment. The bandgap of graphone reduces by about 1 eV when it is supported on hBN due to the polarization effects at the graphone/hBN interface. The band offsets at graphone/hBN interface indicate that hBN can be used not only as a substrate but also as a dielectric in the field effect devices employing graphone as a channel material. Our study could open up new way of bandgap engineering in graphene based nanostructures.

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Tuning electronic and magnetic properties of graphene by surface modification

Cited by 213 publications

References 22 publications

Subgap optical conductivity in semihydrogenated graphene

Subgap optical conductivity in semihydrogenated graphene

Hydrogenation of Graphene and Hydrogen Diffusion Behavior on Graphene/Graphane Interface

Quasiparticle Band Gap Engineering of Graphene and Graphone on Hexagonal Boron Nitride Substrate

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