Tuning Fe concentration in epitaxial gallium ferrite thin films for room temperature multiferroic properties

Zhong, Gaokuo; Bitla, Yugandhar; Wang, Jinbin; Zhong, Xiangli; An, Feng; Chin, Y. Y.; Zhang, Yi; Gao, Wenpei; Zhang, Yuan; Eshghinejad, Ahmad; Esfahani, Ehsan Nasr; Zhu, Qingfeng; Tan, Congbing; Xun, Meng; Lin, Hong Ji; Pan, Xiaoqing; Xie, Shuhong; Chu, Y. S.; Li, Jiangyu

doi:10.1016/j.actamat.2017.12.041

Cited by 29 publications

(19 citation statements)

References 49 publications

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“…This contact-free technique is frequently used to probe the breaking of inversion symmetry related to the onset of ferroic order such as spontaneous polarization in bulk crystals and thin films [25]. While the multiferroic properties of bulk GFO have been extensively studied by this technique [36][37][38][39][40][41], reports on SHG probing of the polar properties of GFO thin films are limited [20,42]. The allowed SHG components related to the polarization in GFO are set by its orthorhombic mm2 point group with five independent elements.…”

Section: Resultsmentioning

confidence: 99%

“…The complexity of this structure makes its deposition as thin films with controlled interfaces difficult. Among the few studies in the literature reporting on the growth of thin films of GFOx [11,[18][19][20], none addresses the growth mode nor the possibility to obtain a two-dimensional (2D) growth mode. The need for atomically smooth thin films is, however, a fundamental prerequisite in spintronics to avoid a charge/spin transport degradation across the interface due to electrons scattering [21].…”

Section: Introductionmentioning

confidence: 99%

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Ultrathin regime growth of atomically flat multiferroic gallium ferrite films with perpendicular magnetic anisotropy

Homkar

Preziosi

Devaux

et al. 2019

Phys. Rev. Materials

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Room temperature magnetoelectric multiferroic thin films offer great promises for the spintronics industry. The actual development of devices, however, requires the production of ultrathin atomically smooth films of high crystalline quality in order to increase spin transfer efficiency. Using both high-resolution transmission electron microscopy and atomically resolved electron energy loss spectroscopy, we unveil the complex growth mechanism of a promising candidate, gallium ferrite. This material, with its net room-temperature magnetization of approximately 100 emu/cm 3 , is an interesting challenger to the antiferromagnetic bismuth ferrite. We obtained atomically flat gallium ferrite ultrathin films with a thickness control down to one fourth of a unit cell. Films with thicknesses as low as 7 nm are polar and show a perpendicular magnetic anisotropy of 3 × 10 3 J/m 3 at 300 K, which makes them particularly attractive for spin current transmission in spintronic devices, such as spin Hall effect based heavy-metal / ferrimagnetic oxide heterostructures.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrathin regime growth of atomically flat multiferroic gallium ferrite films with perpendicular magnetic anisotropy

Homkar

Preziosi

Devaux

et al. 2019

Phys. Rev. Materials

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“…After the first report on the utilization of SnO 2 as an anode in LIBs by Idota et al in 1997 [ 12 ], extensive research has been carried out to solve the problem of volumetric expansion [ 13 , 14 , 15 ]. Benefiting from the development of nanotechnology and nanoscience [ 16 , 17 , 18 ], a wide variety of SnO 2 nanostructures, such as nanorods [ 19 ], nanowires [ 20 , 21 ], nanotubes [ 22 ], and nanofibers [ 23 ], have been employed to improve the electrochemical performance and cyclic stability of SnO 2 -based anodes. Nevertheless, these nanostructures of SnO 2 suffer from the problems of agglomeration, redundant interfaces, and limited electron transfer [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

Highly Ordered SnO2 Nanopillar Array as Binder-Free Anodes for Long-Life and High-Rate Li-Ion Batteries

et al. 2021

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SnO2, a typical transition metal oxide, is a promising conversion-type electrode material with an ultrahigh theoretical specific capacity of 1494 mAh g−1. Nevertheless, the electrochemical performance of SnO2 electrode is limited by large volumetric changes (~300%) during the charge/discharge process, leading to rapid capacity decay, poor cyclic performance, and inferior rate capability. In order to overcome these bottlenecks, we develop highly ordered SnO2 nanopillar array as binder-free anodes for LIBs, which are realized by anodic aluminum oxide-assisted pulsed laser deposition. The as-synthesized SnO2 nanopillar exhibit an ultrahigh initial specific capacity of 1082 mAh g−1 and maintain a high specific capacity of 524/313 mAh g−1 after 1100/6500 cycles, outperforming SnO2 thin film-based anodes and other reported binder-free SnO2 anodes. Moreover, SnO2 nanopillar demonstrate excellent rate performance under high current density of 64 C (1 C = 782 mA g−1), delivering a specific capacity of 278 mAh g−1, which can be restored to 670 mAh g−1 after high-rate cycling. The superior electrochemical performance of SnO2 nanoarray can be attributed to the unique architecture of SnO2, where highly ordered SnO2 nanopillar array provided adequate room for volumetric expansion and ensured structural integrity during the lithiation/delithiation process. The current study presents an effective approach to mitigate the inferior cyclic performance of SnO2-based electrodes, offering a realistic prospect for its applications as next-generation energy storage devices.

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“…GFO has been synthesized using different techniques, such as the floating-zone method [6], sol-gel [11][12][13], solid state route [14][15][16][17][18] and solid-state chemical reaction [19]. High-quality, thin films have been obtained when using pulsed laser deposition (PLD) [7,[20][21][22][23], but industrial methods are needed for massive production. The inherent problems for the synthesis of this material system were highlighted when shown the necessity of a large optimization process in the solid-state route [14], and problems were detected when trying to electrodeposit GFO [24].…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of Hybrid Magnetostrictive/Magnetoelectric Layered Systems

et al. 2021

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The potential use of electrodeposition to synthesize a hybrid magnetostrictive/magnetoelectric layered system is shown in this paper. By appropriately adjusting pH, growth potential, and electrolyte composition, it is possible to achieve thin films in which magnetoelectric oxide GaFeO3 (GFO) is formed in close contact with magnetostrictive metallic FeGa alloy. X-ray diffractometry shows the formation of FeGa as well as GFO and Fe oxides. Electron microscopy observations reveal that GFO mainly segregates in grain boundaries. Samples are ferromagnetic with an isotropic magnetic behavior in the sample plane. Magnetic stripes are observed by magnetic force microscopy and are correlated to Fe3O4. When its segregation is minimal, the absence of stripes can be used to monitor Fe oxide segregation.

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Tuning Fe concentration in epitaxial gallium ferrite thin films for room temperature multiferroic properties

Cited by 29 publications

References 49 publications

Ultrathin regime growth of atomically flat multiferroic gallium ferrite films with perpendicular magnetic anisotropy

Ultrathin regime growth of atomically flat multiferroic gallium ferrite films with perpendicular magnetic anisotropy

Highly Ordered SnO2 Nanopillar Array as Binder-Free Anodes for Long-Life and High-Rate Li-Ion Batteries

Electrodeposition of Hybrid Magnetostrictive/Magnetoelectric Layered Systems

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