2023
DOI: 10.1021/acsami.3c11151
|View full text |Cite
|
Sign up to set email alerts
|

Tuning Film Stresses for Open-Air Processing of Stable Metal Halide Perovskites

Muneeza Ahmad,
Carsen Cartledge,
Gabriel McAndrews
et al.

Abstract: Challenges to upscaling metal halide perovskites (MHPs) include mechanical film stresses that accelerate degradation, dominate at the module scale, and can lead to delamination or fracture. In this work, we demonstrate open-air blade coating of single-step coated perovskite as a scalable method to control residual film stress after processing and introduce beneficial compression in the thin film with the use of polymer additives such as gellan gum and corn starch. The optoelectronic properties of MHP films wit… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

1
3
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 5 publications
(4 citation statements)
references
References 44 publications
(72 reference statements)
1
3
0
Order By: Relevance
“…Due to these characteristics, we are confident that the observed relaxation is not influenced by structural phase transitions or atomic rearrangement processes. Importantly, the relaxation observed here is unique to that reported recently by Ahmad et al in which stress irreversibly relaxed due to the decomposition of MAPbI 3 to nonperovskite phases (i.e., PbI 2 ) . No signs of structural degradation or phase transformations were detected with XRD during air exposure for 4 h (Figure S13).…”
supporting
confidence: 73%
See 1 more Smart Citation
“…Due to these characteristics, we are confident that the observed relaxation is not influenced by structural phase transitions or atomic rearrangement processes. Importantly, the relaxation observed here is unique to that reported recently by Ahmad et al in which stress irreversibly relaxed due to the decomposition of MAPbI 3 to nonperovskite phases (i.e., PbI 2 ) . No signs of structural degradation or phase transformations were detected with XRD during air exposure for 4 h (Figure S13).…”
supporting
confidence: 73%
“…Importantly, the relaxation observed here is unique to that reported recently by Ahmad et al in which stress irreversibly relaxed due to the decomposition of MAPbI 3 to nonperovskite phases (i.e., PbI 2 ). 44 No signs of structural degradation or phase transformations were detected with XRD during air exposure for 4 h (Figure S13). To probe the universality of stress and strain relaxation for perovskites in ambient conditions and its mechanism, we explored additional perovskite compositions including MAPbBr 3 and MAPbI 3 (Figure S14, Figure 2).…”
mentioning
confidence: 99%
“…For MAPb(I 0.8 Br 0.2 ) 3 devices manufactured with gellan gum, they reported an efficiency of 16.37% with an open-circuit voltage of 1.104, short-circuit current density of 20.36 mA/cm 2 , and fill factor of 72.8% [21]. The addition of gellan gum has also been shown to induce an intrinsic compressive stress within the perovskite film, a property correlated with improved mechanical and environmental stability [22,23].…”
Section: Introductionmentioning
confidence: 99%
“…Rather than directly controlling solvent evaporation with an antisolvent, air gun, or the use of heat, gellan gum alters fluid dynamics and free energy considerations within the ink to tune the crystallization process by acting as a barrier to excessive homogenous and early heterogeneous nucleation through intermediate interactions and a change in wetting angle thanks to rheological modification. These factors stimulate the radial, spherulitic growth of similarly oriented domains that grow in a space-filling nature that combats the presence of pinholes while possibly collecting defects and impurities, including the additive, along grain boundaries, which may assist in relieving detrimental thermal or intrinsic stresses typically associated with the thermal expansion mismatch between the PVSK layer and substrate without inhibiting optoelectronic properties [12,22].…”
Section: Introductionmentioning
confidence: 99%