Tuning interfacial spin filters from metallic to resistive within a single organic semiconductor family

Wang, Jingying; Deloach, Andrew; Jiang, Wei; Papa, Christopher M.; Myahkostupov, Mykhaylo; Castellano, Felix N.; Liu, Feng; Dougherty, Daniel B.

doi:10.1103/physrevb.95.241410

Cited by 8 publications

(3 citation statements)

References 49 publications

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“…Theoretical understanding of the mechanism at the molecular spinterfaces is the key to enabling the tuning of device performances. In general, when the molecule is absorbed on ferromagnetic surfaces, it often results in local modulation of magnetism emerging from spin-polarized hybrid interface states. − We first consider a simple organic molecule of benzene adsorbed on the FGT surface. The most stable configuration is found to be the hollow Te site (Figure a).…”

Section: Resultsmentioning

confidence: 99%

Robust Giant Magnetoresistance in 2D Van der Waals Molecular Magnetic Tunnel Junctions

Frauenheim

2021

ACS Appl. Mater. Interfaces

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The spin transport across a zero-dimensional (0D) single-molecule sandwiched by two-dimensional (2D) van der Waals (vdW) ferromagnetic electrodes may open vast opportunities to create novel mixed-dimensional spintronics devices. However, this remains unexplored yet. Inspired by the recent discovery of 2D intrinsic ferromagnets Fe3GeTe2, using first-principles spin transport calculations, we show that single-molecule junctions based on Fe3GeTe2 can yield perfect spin filtering and a significant magnetoresistance (MR) of up to ∼6075%. This remarkable MR is more than 2 orders of magnitude higher than the MR obtained for the corresponding junctions with conventional ferromagnetic metals (e.g., Ni, Fe, and Co). We demonstrate the results of two representative examples that are feasible in the experiments: (i) A benzene or (ii) bezenedithiol (BDT) connected either through a scanning tunneling microscope or break-junction setups. We find that the conductance of BDT junctions is more than 10 times larger than that of the benzene junction due to a much stronger hybridization effect at the molecule–metal interfaces. The key mechanism of the perfect spin filtering and large MR in single-molecule junctions is mainly determined by the intrinsic properties of Fe3GeTe2 electrodes, while the actual conductance is determined by the hybridization strength of the majority spin channel at the molecule–metal interfaces. It is also predicted that the perfect spin filtering and the remarkably huge MR are highly insensitive to structural variations, interface defects, and stacking orders of the electrodes. Our results provide important insights for expanding molecular spintronics platforms from conventional ferromagnetic metals to new 2D vdw magnets.

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Section: Resultsmentioning

confidence: 99%

Robust Giant Magnetoresistance in 2D Van der Waals Molecular Magnetic Tunnel Junctions

Frauenheim

2021

ACS Appl. Mater. Interfaces

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“…In this context, suitable interface engineering may offer an opportunity for manipulating the spin-polarized states injected into OSCs, which may be beneficial to tailoring organic spintronics devices with specific functions. To date, different approaches have been demonstrated to tune the spin interface effect, including doping, 91,209 molecular isomers, 210 molecular symmetry, 211,212 and the element substitution of molecules; however, 213,214 more applications at the device level need to be explored.…”

Section: Spin Polarization Induced By the Spinterface Effectmentioning

confidence: 99%

Strategies and applications of generating spin polarization in organic semiconductors

Guo

Sun

2023

Nanoscale Horiz.

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“…The electronic properties of SGSs are extremely sensitive to external impacts because no threshold energy is required to move electrons from the valence band to the conduction band. , Recently, the SGSs have been found in transition metal-doped monolayer ZnO, N-doped silicene nanoribbons, Heusler compounds such as Mn 2 CoAl, Co-doped PbPdO 2 , VCoHfGa and CrFeHfGa, and so forth. Both half-metals and SGSs with full electron and hole spin polarization are two important candidates for applications in spintronics, − such as spin valves, , spin filters, − spin diode, , and so forth.…”

Section: Introductionmentioning

confidence: 99%

Penta-Hexa-Graphene Nanoribbons: Intrinsic Magnetism and Edge Effect Induce Spin-Gapless Semiconducting and Half-Metallic Properties

Deng

Chen

Zhang

et al. 2020

ACS Appl. Mater. Interfaces

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Two-dimensional materials with intrinsic long-range ordered magnetic moments have drawn a lot of attention. However, for practical applications, whether or not the magnetism is stable in their nanostructures has not been revealed. Here, based on the recently proposed magnetic penta-hexa-graphene, we study the electronic and magnetic properties of its nanoribbons (named PHGNRs). The results show that the PHGNRs have intrinsic robust magnetic moments that are different from zigzag graphene nanoribbons, where the magnetic moments caused by the edge effect are vulnerable. Moreover, the magnetic ground states, namely, ferromagnetic (FM) or antiferromagnetic (AFM), can be transformed by changing the width of PHGNRs. Most interestingly, under the FM ground state, the spin-polarized electronic properties reveal that the zigzag PHGNRs transform from spin-gapless semiconductors (SGSs) to half-metals, as the width of nanoribbons increases, while all the armchair PHGNRs are magnetic semiconductors. Furthermore, by considering different edge effects caused by the residual carbon atoms on the edges, the PHGNRs can further derive different types of SGSs, as well as half-metals. Our work suggests that the PHGNRs possessing intrinsic robust magnetic moments have potential applications in the field of spintronic devices.

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Tuning interfacial spin filters from metallic to resistive within a single organic semiconductor family

Cited by 8 publications

References 49 publications

Robust Giant Magnetoresistance in 2D Van der Waals Molecular Magnetic Tunnel Junctions

Robust Giant Magnetoresistance in 2D Van der Waals Molecular Magnetic Tunnel Junctions

Strategies and applications of generating spin polarization in organic semiconductors

Penta-Hexa-Graphene Nanoribbons: Intrinsic Magnetism and Edge Effect Induce Spin-Gapless Semiconducting and Half-Metallic Properties

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