Tuning of the electron effective mass and exciton wavefunction size in GaAs1−xNx

Polimeni, A.; Masia, Francesco; Högersthal, G. Baldassarri Höger von; Frova, A.; Capizzi, M.; Sanna, Simone; Fiorentini, Vincenzo; Klar, Peter J.; Stolz, W.

doi:10.1016/j.physe.2003.11.118

Cited by 2 publications

(2 citation statements)

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“…There are only very limited experimental data about the effective mass at the CB edge for the bulk GaNAs, it is mainly our recent data from oscillations of polarization angle in the Faraday rotation experiment (solid triangle in figure 7) [14], plasma edge frequency measured in infrared reflectivity (open triangle in figure 7), see footnote 4, the high magnetic field PL (stars in figure 6) [15]. For very low nitrogen content (x = 0.002-0.006) there are indications that the effective mass is around 0.15m 0 [16,17].…”

Section: D Electron Effective Mass At the Bottom Of Ganas Conduction ...mentioning

confidence: 93%

“…The high magnetic field PL yields effective mass around 0.063m 0 , 0.09m 0 and 0.083m 0 for x = 0.011, x = 0.013 and x = 0.017, respectively [15]. Also for ultra dilute limit (i.e., for x = 0.002-x = 0.006) the increase of the effective mass up to 0.15m 0 was reported [16,17]. For 2D systems, like GaN x As 1−x /GaAs QWs, there are more information about m * e , possibly due to an increase of the electron mobility in low-dimensional systems.…”

Section: Introductionmentioning

confidence: 90%

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The electron effective mass at the bottom of the GaNAs conduction band

Skierbiszewski

Gorczyca

Łepkowski

et al. 2004

Semicond. Sci. Technol.

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We determined the electron effective mass, m * e , from the photoluminescence (PL) of GaN x As 1−x /GaAs single quantum wells. The energy of the interband optical transitions is analysed within the frame of the band anti-crossing model (BAC), which accounts for a highly nonparabolic nature of the GaNAs conduction band (CB). From the PL we found that m * e at the bottom of the CB in GaN x As 1−x /GaAs quantum wells (QWs) increases from 0.095m 0 to 0.12m 0 for x increasing from 0.009 to 0.04. We found that the BAC model for III-N-V QWs predicts a strong increase of m * e as a function of the electronic subband number. We analyse also m * e at the bottom of the bulk GaNAs CB using the linear-muffin-tin-orbital (LMTO) method adjusted by inclusion of external potentials to account properly for energy gaps. The effective mass dependence obtained from LMTO calculations reproduces the experimental results. The nature of the nitrogen related A 1 symmetry state, which enters in the BAC model, and similarities of this state with the Ga dangling bond state are discussed.

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