Tuning the electrical performance of solution-processed In2O3TFTs by low-temperature with HfO2-PVP hybrid dielectric

All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors

“…The other high intensity peak in the O 1s spectra observed at 532.9 eV for both types of hybrid dielectric films can be assigned to M–O–C bonding (M = Al and Hf). 56 This suggests that the metal oxide phases in the hybrid dielectric react with the crosslinked PVP polymer, indicating the successful formation of the hybrid dielectric network. This is in agreement with the proposed formation of the hybrid material shown in the scheme of Fig.…”

“…The hybrid dielectric layers with optimized dielectric properties were successfully applied as gate dielectric layers for fabrication of TFTs with sputtered ZnO, a-IGZO and solution processed In 2 O 3 semiconductor layers, with reliable electrical switching properties at low operating voltages. [53][54][55][56][57] In this work, we mixed HfAlO x inorganic materials, with different amounts of hafnium, with crosslinked PVP polymers to obtain HfAlO x -PVP hybrid layers for gate dielectric applications in TFTs. The PVP dielectric polymer offers a higher dielectric constant, around 4-5, than other polymers, and that is why it is one of the organic dielectrics most widely employed in OTFTs.…”

“…The hybrid dielectric layers with optimized dielectric properties were successfully applied as gate dielectric layers for fabrication of TFTs with sputtered ZnO, a-IGZO and solution processed In 2 O 3 semiconductor layers, with reliable electrical switching properties at low operating voltages. 53–57…”

Low‐temperature synthesis of high‐entropy (Hf0.2Ti0.2Mo0.2Ta0.2Nb0.2)B2 powders combined with theoretical forecast of its elastic and thermal properties

“…The weak absorption peak of TM–O–TM at 700 cm −1 was assigned to the condensation of transition metal alkoxides during the hydrothermal polymerization 34,35 . The absorption peaks of C–H at 2854–2922 cm −1 , H–OH at 2344–2371 cm −1 and 1645 cm −1 , C=C at 1570 cm −1 , C–C at 1461 cm −1 , and C–O at 1360 cm −1 can be attributed to organic groups and absorbed water on surfaces of the precursors 36,37 . The solvent‐treated precursors are conducive to mix the metal ions uniformly at the molecular level 38 .…”

“…34,35 The absorption peaks of C-H at 2854-2922 cm −1 , H-OH at 2344-2371 cm −1 and 1645 cm −1 , C=C at 1570 cm −1 , C-C at 1461 cm −1 , and C-O at 1360 cm −1 can be attributed to organic groups and absorbed water on surfaces of the precursors. 36,37 The solvent-treated precursors are conducive to mix the metal ions uniformly at the molecular level. 38 After BTR of precursors in the molten salt at 1573 K for 6 h, all peaks in the FT-IR spectra disappeared, indicating that the precursor was transformed into an inorganic compound with high crystallinity.…”