Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases

Jin, Jun; Luo, Yi; Bao, Peng; Brox-Nilsen, C.; Potter, Richard J.; Song, Aimin

doi:10.1016/j.tsf.2013.12.004

Cited by 17 publications

(16 citation statements)

References 37 publications

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“…The Si substrate formed the back gate contact. Prior to electrical measurements, all the TFTs were annealed in air for 1 hour in order to reduce the conductivity of the films [11].…”

Section: Methodsmentioning

confidence: 99%

Physical and electrical characterization of Mg-doped ZnO thin-film transistors

Shaw

Whittles

Mitrović

et al. 2015

2015 45th European Solid State Device Research Conference (ESSDERC)

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The effect of Mg-doping on the valence and conduction bands of ZnO grown at 200 o C using atomic layer deposition has been investigated using a range of physical characterization techniques: X-ray photoemission spectroscopy, inverse photoemission spectroscopy and spectrocopic ellipsometry. The conduction band minimum is seen to increase with Mg content hence confirming the increased band gap. The physical characterization has been linked with modeling of thinfilm transistor structures whereby a defect state based model has been employed to explain the transport mechanisms within the film Keywords-Zinc Oxide (ZnO), Mg doped ZnO (MgZnO), thinfilm transistors (TFTs), Modeling, X-ray photoemission spectroscopy (XPS), inverse photoemission spectroscopy (IPES), Ellipsometry

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“…The Si substrate formed the back gate contact. Prior to electrical measurements, all the TFTs were annealed in air for 1 hour in order to reduce the conductivity of the films [11].…”

Section: Methodsmentioning

confidence: 99%

Physical and electrical characterization of Mg-doped ZnO thin-film transistors

Shaw

Whittles

Mitrović

et al. 2015

2015 45th European Solid State Device Research Conference (ESSDERC)

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“…ZnO films naturally exhibit n-type conductivity and its origin has been discussed in terms of native defects, such as oxygen vacancies and zinc interstitials [20,21]. In the case of ZnO, it has been shown that oxygen vacancies in ZnO could be quenched upon chemisorbed air/oxygen exposure which reduces the carrier concentration, resulting in a field depletion of surface electrons and conduction band bending [21,22].…”

Section: Photodiode Lifetimementioning

confidence: 99%

“…ZnO can be easily deposited at room-or relatively low temperatures to form thin layers by standard techniques such as sputtering [6], atomic-layer deposition [7] and pulsed-laser deposition [8]. The electron mobility is generally limited by surface roughness and carrier scatterings at grain boundaries; however, the electron mobility in ZnO has been demonstrated to reach up to 110cm 2 /Vs, when using an elevated substrate temperature during the growth step [9]. In most cases where ZnO is deposited onto substrates at room temperature, the mobility is measured to be around 1-5 cm 2 /Vs [10].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers

Kettle

Chang

Horie

2015

Microelectronic Engineering

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We report the fabrication and characterisation of an organic-inorganic hybrid Photodiode (HPD) based on PCPDTBT and Zinc Oxide (ZnO) photoactive layers. The main benefit of using these materials is that multi spectral light sensing from the UV through to the Near Infrared is achieved, encompassing wavelengths ~350nm-870nm. To our knowledge, this is one of the widest range responses reported for an inorganic-organic hybrid photodiode. The evaluation of the technology shows the devices exhibit one of the lowest levels of dark currents reported for a HPD, but some limitations exist due to a low on-off ratio and non-linearity of the responsivity at low incident power.The stability of devices made with PCPDTBT:ZnO active layers is compared to more commonly reported P3HT:ZnO devices in dark and it is shown that using PCPDTBT substantially improves lifetime. Highlights-Wide photoresponse from UV to the NIR is achieved -Device exhibits low dark current and high rectification ratio for a hybrid device -Responsivity is measured and shown to be linear for incident power> 0.04W/cm 2 -Improved lifetime observed with PCPDTBT active layer, when compared to P3HT-based devices

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“…Since 2010, a-Si:H based thin film devices have been actively replaced with either lowtemperature polysilicon (LTPS) which offers higher mobility but suffers from non-homogeneity 6,7 or amorphous metaloxide based TFTs for large area applications such as display backplanes. Over the past decade, metal oxide semiconductors have been studied intensively and used in many thin-film based devices [8][9][10][11][12][13] . In case of polycrystalline single metal oxide semiconductors, such as ZnO, SnO 2 , In 2 O 3 , Ga 2 O 3 etc., the conduction band is made of large overlapping s-orbitals of metal cations (with electronic configuration (n-1)d 10 ns 0 ).…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Srivastava

Nahas

Bhowmick

et al. 2019

Journal of Applied Physics

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Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO) has been researched extensively and is now being used in commercial applications. It is proposed in the literature that overlapping In-5s orbitals form the conduction path and the carrier mobility is limited due to the presence of multiple cations which create a potential barrier for the electronic transport in a-IGZO semiconductors. A multi-anion approach towards amorphous semiconductors has been suggested to overcome this limitation and has been shown to achieve hall mobilities up to an order of magnitude higher compared to multi-cation amorphous semiconductors. In the present work, we compare the electronic structure and electronic transport in a multi-cation amorphous semiconductor, a-IGZO and a multi-anion amorphous semiconductor, a-ZnON using computational methods. Our results show that in a-IGZO, the carrier transport path is through the overlap of outer s-orbitals of mixed cations and in a-ZnON, the transport path is formed by the overlap of Zn-4s orbitals, which is the only type of metal cation present. We also show that for multi-component ionic amorphous semiconductors, electron transport can be explained in terms of orbital overlap integral which can be calculated from structural information and has a direct correlation with the carrier effective mass which is calculated using computationally expensive first principle DFT methods.arXiv:1812.11333v3 [cond-mat.mtrl-sci]

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Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases

Cited by 17 publications

References 37 publications

Physical and electrical characterization of Mg-doped ZnO thin-film transistors

Physical and electrical characterization of Mg-doped ZnO thin-film transistors

Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

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