2014
DOI: 10.1103/physrevb.90.235310
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Tuning the electrically evaluated electron Landégfactor in GaAs quantum dots and quantum wells of different well widths

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Cited by 14 publications
(17 citation statements)
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“…A perturbative treatment of field-induced changes in the effective densities of states for electrons with different components of the total angular momentum allows the scaling to be interpreted in terms of an effective spin-splitting of the impurity level by an energy proportional to Γǫ Z /D. A similar picture should hold for any realization of the Anderson impurity model with g i = 0, as seems likely to be achievable in lateral quantum dots [27].…”
Section: Introductionmentioning
confidence: 95%
See 1 more Smart Citation
“…A perturbative treatment of field-induced changes in the effective densities of states for electrons with different components of the total angular momentum allows the scaling to be interpreted in terms of an effective spin-splitting of the impurity level by an energy proportional to Γǫ Z /D. A similar picture should hold for any realization of the Anderson impurity model with g i = 0, as seems likely to be achievable in lateral quantum dots [27].…”
Section: Introductionmentioning
confidence: 95%
“…(27). After further transformation to an energy representation, the problem maps to a generalized two-channel Anderson model…”
Section: Model With Bulk Zeeman Fieldmentioning
confidence: 99%
“…In GaAs, the bulk g factor for electron carriers is g G = −0.44. In addition, the g factor in nanostructures is affected by details of electron confinement [8][9][10][11][12]. Deviations from the bulk GaAs g factor have been observed in various heterostructures and quantum-dot configurations, including dot-to-dot variations in quantum-dot arrays [6,7,[12][13][14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%
“…In search for generic features, we measured for various sample cooldowns, which can change the shape of the dot, and for both in-plane and perpendicular magnetic fields, by which we isolate the strong orbital effects of the latter. Due to the influence of the AlGaAs barriers [2], the g-factor is small, |g ⊥ | < 0.12 for an out-of-plane magnetic field, and, as we find from the analysis below, about five times smaller for in-plane fields. (These small values make it easier to analyze the behavior of the rates at small Zeeman energies, which are pushed to higher magnetic fields by the small g-factors.)…”
mentioning
confidence: 77%
“…We explain this behavior as due to the crossover of the dominant blockade lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence. Electron spins in semiconductor quantum dots are promising resources for quantum information processing [1,2]. Laterally gated dots [5] are especially attractive due to the flexibility and scalability [4] of their design, and the possibility to electrically initialize [5], manipulate [6,7], and measure [8,9] the slowly relaxing [10,11] spin states.…”
mentioning
confidence: 99%