2022
DOI: 10.1021/acsomega.2c04207
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Tuning the Electronic and Optical Properties of the ZrS2/PtS2 van der Waals Heterostructure by an External Electric Field and Vertical Strain

Abstract: Two-dimensional (2D) material-based heterostructures gain increasing interest due to their extraordinary properties and excellent potential for the optoelectronic devices. This study deals with modulation of electronic and optical properties of the ZrS 2 /PtS 2 van der Waals heterostructure under vertical strain and an external electric field based on first principles calculation. Different stacking of ZrS 2 and PtS 2 l… Show more

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Cited by 7 publications
(3 citation statements)
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“…The transition metal dichalcogenides (TMDs), specifically MX 2 (where M = Zr, Sn; X = S, Se), exhibit semiconducting characteristics in their 1T-phase. 31 These structures adopt a 1T-CdI 2 -like configuration with the P 3̅ m 1 space group, where the M atom is situated between two chalcogen atoms (X = S, Se), forming a single atomic layer within the trigonal structure. 32 In bulk TMDs, a layered structure is observed where each layer mirrors its adjacent layer, and weak van der Waals interactions prevail between the layers.…”
Section: Results and Discussionmentioning
confidence: 99%
“…The transition metal dichalcogenides (TMDs), specifically MX 2 (where M = Zr, Sn; X = S, Se), exhibit semiconducting characteristics in their 1T-phase. 31 These structures adopt a 1T-CdI 2 -like configuration with the P 3̅ m 1 space group, where the M atom is situated between two chalcogen atoms (X = S, Se), forming a single atomic layer within the trigonal structure. 32 In bulk TMDs, a layered structure is observed where each layer mirrors its adjacent layer, and weak van der Waals interactions prevail between the layers.…”
Section: Results and Discussionmentioning
confidence: 99%
“…In our computation of electronic properties, these obtained results support the previously reported data with the PBE functional but in order to get more accurate results we have used the HSE functional. 51,52…”
Section: Resultsmentioning
confidence: 99%
“…In our computation of electronic properties, these obtained results support the previously reported data with the PBE functional but in order to get more accurate results we have used the HSE functional. 51,52 The work function of the material is defined as the amount of energy required to remove an electron from the surface, which is calculated using formula (7), 53 where the terms E f and E vac correspond to the Fermi energy and electrostatic potential relative to the vacuum, respectively, and work functions of ML PtS 2 , ML ZrS 2 , and v-HS PtS 2 /ZrS 2 are illustrated in Fig. 4(a)-(c) respectively.…”
Section: Electronic Propertiesmentioning
confidence: 99%