Tuning the electronic properties of reduced bilayer graphene oxide: controllable flat bands and improved conductivity

Abstract

Going beyond conventional doping techniques, this work explores the interesting phenomenon of flat bands in single and double layer graphene induced by functionalization with epoxy and hydroxyl groups. We show that these flat bands, located near the Fermi level, provide a new level of control over electronic properties, influencing conductivity and potentially allowing bandgap manipulation. In particular, in bilayer structures we discover a remarkable asymmetry in flat band formation, where less distorted layers exhibit flatter bands and dominate the electronic landscape. Furthermore, the presence of hydrogen bonding in bilayer systems leads to a lower flat band energy, which has promising implications for stability. This work opens new avenues for designing next-generation electronic devices with engineered functionalities by harnessing the power of flat band engineering in functionalized graphene.