2015
DOI: 10.1103/physrevb.92.201409
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Tuning the electronic structure of monolayer graphene/MoS2van der Waals heterostructures via interlayer twist

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Cited by 58 publications
(36 citation statements)
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“…This is also consistent with the findings of W. S. Yun et al [49] who showed, using the first-principles calculations, that the tensile strain reduces the gap energy. Furthermore, W. Jin [8] used microprobe angle resolved photoemission spectroscopy to prove the dependency of MoS 2 on the twist angle in graphene/MoS 2 heterostructure. They affirm that the band structure of MoS 2 becomes indirect except for 30 twist angle with respect to graphene, meanwhile graphene properties remain intact.…”
Section: Resultsmentioning
confidence: 99%
“…This is also consistent with the findings of W. S. Yun et al [49] who showed, using the first-principles calculations, that the tensile strain reduces the gap energy. Furthermore, W. Jin [8] used microprobe angle resolved photoemission spectroscopy to prove the dependency of MoS 2 on the twist angle in graphene/MoS 2 heterostructure. They affirm that the band structure of MoS 2 becomes indirect except for 30 twist angle with respect to graphene, meanwhile graphene properties remain intact.…”
Section: Resultsmentioning
confidence: 99%
“…This valence-band compression can be attributed to the presence of the sapphire substrate since this has not been observed for the free-standing MoS 2 . The substrate likely induced a weak interaction with the bottom layer of S possibly leading to substrate-induced corrugations, Mo-S bond length variations, or changes in the dielectric environment as similarly suggested for MoS 2 on Si (111) [8,25]. The detailed modeling of the van der Waals interaction between MoS 2 and c sapphire and the resulting interfacial state is out of the scope of the current Rapid Communication as the realistic predictions of the band structure require computationally challenging techniques [26].…”
mentioning
confidence: 79%
“…The electronic states at the K point derive from in-plane Mo d(x 2 − y 2 )/d xy orbitals and therefore, only a significant in-plane strain is expected to affect the derived value of the effective mass. This is not the case here because no significant strain was observed and the c-sapphire substrate does not have a significant density of states near the VBM of MoS 2 unlike the MoS 2 /graphene system where charge-transfer-induced strain for certain twist angles can change the positions of band maxima [25]. Moreover, the overlap between the electronic states of misaligned grains, which comprise less than 10% of the grains, might have contributed to the broadening of the dispersion relationship which increased the uncertainty in the extracted values of the effective mass.…”
mentioning
confidence: 92%
“…The results obtained using time-and angle-resolved photoemission (ARPES) reveal a significant (~400 meV) reduction of the band gap of the MoS 2 layer induced by optical excitation [89]. The band gap and photoluminescence shift were reported to depend on the orientation of the graphene and MoS 2 monolayers [90,91]. The changes in electronic structure of graphene caused by interaction with MoS 2 monolayer were suggested to be less pronounced.…”
Section: Band Gap and Screening In Mos 2 Layersmentioning
confidence: 97%
“…A number of recent papers was devoted to detailed studies of a model 2D heterostructure formed of a single layer of MoS 2 on graphene [88][89][90][91][92][93]. It was found that the electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects.…”
Section: Band Gap and Screening In Mos 2 Layersmentioning
confidence: 99%