Tuning the excitongfactor in single InAs/InP quantum dots

Abstract

Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp 3 tight binding calculations, which show that the hole g factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.

Scalable qubit architecture based on holes in quantum dot molecules

“…The lateral size of InAs QDs can be controlled experimentally by growing on templated surfaces. 47 It may also be possible to use new methods for the growth of QDMs with precisely tailored three-dimensional configurations to engineer physical interactions that maximize wavelength tunability and gate operation fidelity. 48 …”

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

“…Existing reports address only the problem of either exciton or electron/hole g-factors in InAs/InP QDs. [10][11][12][13] However, issues such as the longitudinal or transverse spin relaxation or the role of spin pumping schemes on the spin memory effect in this particular quantum system have not been explored up to date.In this letter, we investigate properties of polarized emission and spin states of excitons confined in an ensemble of InAs/In 0.53 Ga 0.23 Al 0.24 As/InP(001) QDashes by means of polarization-and time-resolved photoluminescence (TRPL), as well as photoluminescence excitation spectroscopy (PLE). We demonstrate various schemes of spin injection and their impact on the spin memory effect in QDashes emitting near 1.55 lm.…”

“…Existing reports address only the problem of either exciton or electron/hole g-factors in InAs/InP QDs. [10][11][12][13] However, issues such as the longitudinal or transverse spin relaxation or the role of spin pumping schemes on the spin memory effect in this particular quantum system have not been explored up to date.…”

Magnetic field implementation in multibandk⋅pHamiltonians of holes in semiconductor heterostructures

“…[14][15][16] Up to date, most theoretical studies investigating the magnetic response of QDs rely on effective mass and k · p models. The standard inclusion of magnetic fields in k · p Hamiltonians consists in replacing the canonical momentum p by the kinetic momentum p − qA, supplemented with the spin Zeeman term, in the differential equation fulfilled by the envelope function (here q is the carrier charge and A the potential vector defining the magnetic field).…”