2012
DOI: 10.1103/physrevlett.108.066101
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Tuning the Growth Orientation of Epitaxial Films by Interface Chemistry

Abstract: The support of epitaxial films frequently determines their crystallographic orientation, which is of crucial importance for their properties. We report a novel way to alter the film orientation without changing the substrate. We show for the growth of CoO on the Ir(100) surface that, while the oxide grows in (111) orientation on the bare substrate, the orientation switches to (100) by introducing a single (or a few) monolayer(s) of Co between the oxide and substrate. This tunability of the orientation of epita… Show more

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Cited by 28 publications
(35 citation statements)
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“…We take advantage of the fact that a variety of well-ordered Co 3 O 4 and CoO films can be grown on Ir(100). [34][35][36][37][38] In a unique fashion these films allow to vary the stoichiometry, the surface orientation, the film thickness, and the defect density. Over the last years many of these structures have been characterized in great detail using low energy electron diffraction (LEED) I-V analysis and scanning tunneling microscopy (STM).…”
Section: Page 2 Of 32 Acs Paragon Plus Environmentmentioning
confidence: 99%
“…We take advantage of the fact that a variety of well-ordered Co 3 O 4 and CoO films can be grown on Ir(100). [34][35][36][37][38] In a unique fashion these films allow to vary the stoichiometry, the surface orientation, the film thickness, and the defect density. Over the last years many of these structures have been characterized in great detail using low energy electron diffraction (LEED) I-V analysis and scanning tunneling microscopy (STM).…”
Section: Page 2 Of 32 Acs Paragon Plus Environmentmentioning
confidence: 99%
“…33,34 Here, various other factors were considered, in particular the presence of oxygen vacancies and surface Co 2+ ions. [38][39][40][41][42][43][44][45][46][47][48] In a unique fashion, these films allow varying the stoichiometry, the surface orientation, the film thickness, and the defect density. 29 The present work aims at the development of new cobaltoxide-based model systems which allow us to study their surface chemistry under well-controlled ultrahigh vacuum (UHV) conditions.…”
Section: Introductionmentioning
confidence: 99%
“…11 The interest in one-layer-thick oxides is manifold, in particular (i) two-dimensional oxides can be seen as model systems for the oxide/metal interface, allowing investigation by means of high-resolution scanning probe techniques; (ii) the vertical confinement and the elastic and electronic coupling with the metallic substrate allows stabilizing stoichiometries and atomic structures that can differ with respect to the corresponding bulk terminations, with important implications in chemical reactivity, 12,13 adsorption properties, 14 and magnetic ordering 15 of the resulting structures; and (iii) the wetting layer can represent the precursor phase for the growth of thicker films. 16,17 Single layers of transition metal oxides have been stabilized on noble and quasinoble metals such as, for instance, Pd, 18,19 Ag, 20,21 Pt, 22,23 Au, 24 and Ir. 25 In these cases, growth techniques such as reactive deposition (i.e., metal deposition in oxygen atmosphere) and/or postoxidation are typically applied, leading to ordered phases and well-defined oxidemetal interfaces.…”
Section: Introductionmentioning
confidence: 99%