Tuning the intrinsic electric field of Janus-TMDs to realize high-performance β-Ga2O3 device based on β-Ga2O3/Janus-TMD heterostructures

Yuan, Haidong; Su, Jie; Zhang, Pengliang; Lin, Zhenhua; Zhang, Jie; Chang, Jingjing

doi:10.1016/j.mtphys.2021.100549

Cited by 10 publications

(2 citation statements)

References 42 publications

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“…In contrast, the DTs of PbI/J-TMDs heterojunctions with PbI/X-MXY configuration enhance, whereas those of PbI/J-TMDs heterojunctions with PbI/Y-MXY configuration decline with the enlarging intrinsic To directly show the carrier transfer efficiency at the CsPbI 3 /J-TMDs heterojunctions, the tunneling probability (P TB ) is calculated as follows (Yuan et al, 2020(Yuan et al, , 2021) 1)…”

Section: Transport Propertiesmentioning

confidence: 99%

Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

Yuan

Zhang

et al. 2022

iScience

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Section: Transport Propertiesmentioning

confidence: 99%

Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

Yuan

Zhang

et al. 2022

iScience

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“…Because of the advantages of high sensitivity, low background noise, and low false alarm rate, solar-blind ultraviolet photodetectors have significant applications in civil, industrial, and military fields. − Ultrawide-bandgap semiconductors, such as diamond, Al x Ga 1– x N, Mg x Zn 1– x O, and Ga 2 O 3 , have been utilized to develop such photodetectors because of their strong absorption in the solar-blind region. − Among the above materials, Ga 2 O 3 with an intrinsic bandgap of 4.2–5.3 eV has absorption cutoff wavelengths in the solar-blind region without the need of bandgap tuning through alloying or doping, making it an ideal candidate for solar-blind detection. − Recently, with the rapid development of optical measurement techniques, there is an increasing demand for solar-blind precision measurement, which has been demonstrated using photodetector arrays. − However, the measurement accuracy of these photodetector arrays was limited by the spacing and size of the photodetector pixels.…”

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confidence: 99%

Ga₂O₃-Based Solar-Blind Position-Sensitive Detector for Noncontact Measurement and Optoelectronic Demodulation

et al. 2022

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As a kind of photodetector, position-sensitive-detectors (PSDs) have been widely used in noncontact photoelectric positioning and measurement. However, fabrications and applications of solar-blind PSDs remain yet to be harnessed. Herein, we demonstrate a solar-blind PSD developed from a graphene/Ga2O3 Schottky junction with a 25-nanometer-thick Ga2O3 film, in which the absorption of the nanometer-thick Ga2O3 is enhanced by multibeam interference. The graphene/Ga2O3 junction exhibits a responsivity of 48.5 mA/W and a rise/decay time of 0.8/99.8 μs at zero bias. Moreover, the position of the solar-blind spot can be determined by the output signals of the PSD. Using the device as a sensor of noncontact test systems, we demonstrate its application in measurement of angular, displacement, and light trajectory. In addition, the position-sensitive outputs have been used to demodulate optical signals into electrical signals. The results may prospect the application of solar-blind PSDs in measurement, tracking, communication, and so on.

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Janus 2D Transition Metal Dichalcogenides: Research Progress, Optical Mechanism and Future Prospects for Optoelectronic Devices

Ahmad,

Wang,

Kazmi

et al. 2024

Laser & Photonics Reviews

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Exploring the extraordinary optoelectronic properties of two‐dimensional (2D) materials to construct advanced optoelectronic devices is a major goal for academic researchers and industrialists. Emerging 2D Janus materials are the innovative class of 2D materials in which two sides are either asymmetrical functionalized or exposed to different environments. Distinctive features of Janus 2D materials such as tunable bandgaps, electronic structures, the presence of Rashba effects, excitonic effects, piezoelectric effects etc. make its magnificent candidates for optoelectronic devices. The van der Waals (vdWs) heterostructure with novel properties assembled by Janus 2D materials and low dimensional materials provides new opportunities and promising applications. This review aims to offer the recent advances in the Janus 2D materials and inside mechanism in 2D Janus vdWs heterostructure from an optoelectronics point of view. Here, the latest progress in the Janus 2D materials including their vdWs heterostructures from the perspective of theoretical prediction, and synthesis techniques is presented. The investigation of their physical optoelectronics properties and optoelectronic device applications is summarized. Finally, the future directions, challenges, and opportunities regarding the research process of Janus 2D materials and their vdWs heterostructure are discussed for designing promising optoelectronic devices.

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Tuning the intrinsic electric field of Janus-TMDs to realize high-performance β-Ga2O3 device based on β-Ga2O3/Janus-TMD heterostructures

Cited by 10 publications

References 42 publications

Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

Ga₂O₃-Based Solar-Blind Position-Sensitive Detector for Noncontact Measurement and Optoelectronic Demodulation

Janus 2D Transition Metal Dichalcogenides: Research Progress, Optical Mechanism and Future Prospects for Optoelectronic Devices

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Tuning the intrinsic electric field of Janus-TMDs to realize high-performance β-Ga2O3 device based on β-Ga2O3/Janus-TMD heterostructures

Cited by 10 publications

References 42 publications

Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

Ga2O3-Based Solar-Blind Position-Sensitive Detector for Noncontact Measurement and Optoelectronic Demodulation

Janus 2D Transition Metal Dichalcogenides: Research Progress, Optical Mechanism and Future Prospects for Optoelectronic Devices

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Product

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Ga₂O₃-Based Solar-Blind Position-Sensitive Detector for Noncontact Measurement and Optoelectronic Demodulation