Tuning the linear and nonlinear optical properties in double and triple <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mi>δ</mml:mi><mml:mo linebreak="goodbreak" linebreakstyle="after">−</mml:mo></mml:mrow></mml:math> doped GaAs semiconductor: Impact of electric and magnetic fields

Dakhlaoui, Hassen; Nefzi, Mouna

doi:10.1016/j.spmi.2019.106292

Cited by 28 publications

(3 citation statements)

References 47 publications

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“…Immediately after the energies and related wave functions are acquired, for transitions between any two electronic states, the linear and non-linear absorption coefficients are found by using perturbation expansion and density matrix methods. Using the relevant approaches mentioned before, expressions of the linear, third-order nonlinear, and total absorption coefficients (ACs) for the optical transitions are found, respectively, as follows [27][28][29][30]:…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Position-Dependent Effective Mass and Asymmetry Effects on the Electronic and Optical Properties of Quantum Wells with Improved Rosen–Morse Potential

Kasapoglu,

Yücel,

Duque

2023

Condensed Matter

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In this study, we investigated, for the first time, the effects of the spatially varying effective mass, asymmetry parameter, and well width on the electronic and optical properties of a quantum well which has an improved Rosen–Morse potential. Calculations were made within the framework of the effective mass and parabolic band approximations. We have used the diagonalization method by choosing a wave function based on the trigonometric orthonormal functions to find eigenvalues and eigenfunctions of the electron confined within the improved Rosen–Morse potential. Our results show that the position dependence mass, asymmetry, and confinement parameters cause significant changes in the electronic and optical properties of the structure we focus on since these effects create a significant increase in electron energies and a blue shift in the absorption spectrum. The increase in energy levels enables the development of optoelectronic devices that can operate at wider wavelengths and absorb higher-energy photons. Through an appropriate choice of parameters, the Rosen–Morse potential offers, among many advantages, the possibility of simulating heterostructures close to surfaces exposed to air or vacuum, thus giving the possibility of substantially enriching the allowed optical transitions given the breaking of the system´s symmetries. Similarly, the one-dimensional Rosen–Morse potential model proposed here can be extended to one- and zero-dimensional structures such as core/shell quantum well wires and quantum dots. This offers potential advancements in fields such as optical communication, imaging technology, and solar cells.

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Section: Theoretical Frameworkmentioning

confidence: 99%

Position-Dependent Effective Mass and Asymmetry Effects on the Electronic and Optical Properties of Quantum Wells with Improved Rosen–Morse Potential

Kasapoglu,

Yücel,

Duque

2023

Condensed Matter

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“…We apply a constant magnetic field B(x) along the x direction on the structure which is perpendicular to the growth direction z, so, we can write [23,24]: 2 (2)…”

Section: Theorymentioning

confidence: 99%

Effects of the Magnetic Field and Thickness of Layers on Intersubband Absorption in Asymmetric Double Parabolic Quantum Wells

Sebbar,

Boudjema,

Boukaoud

et al. 2023

MMEP

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This numerical study scrutinizes the impact of both the thickness of layers and an externally applied magnetic field on the optical absorption coefficient and alterations in the refractive index pertaining to the intersubband optical transition (1-2) within an asymmetric double parabolic structure, utilizing GaAs/AlGaAs quantum wells as a basis. Energy levels and their corresponding wave functions have been ascertained through the use of the shooting method. The findings of this investigation suggest a pronounced sensitivity of the optical absorption coefficient and changes in the refractive index to the thickness of the layers and the applied external magnetic field. It has been observed that the intensification of the magnetic field results in a resonant peak position shifting towards higher energy values, whereas the thickness of the layers exerts an influence on the resonance peak magnitude. The insights derived from this study hold considerable potential for application, particularly in the development of optical devices predicated on intersubband electronic transitions.

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“…The influences of both electric and magnetic fields have been theoretically and experimentally studied by many researchers [11][12][13][14][15][16][17][18][19][20][21]. For instance, Dakhlaoui et al, investigated the effects of magnetic and electric fields on the TOAC [22]. They showed that these probes can control the red and blue shifts of the TOAC in double and triple δ-doped GaAs semiconductor heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

et al. 2022

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Tuning the linear and nonlinear optical properties in double and triple δ− doped GaAs semiconductor: Impact of electric and magnetic fields

Cited by 28 publications

References 47 publications

Position-Dependent Effective Mass and Asymmetry Effects on the Electronic and Optical Properties of Quantum Wells with Improved Rosen–Morse Potential

Position-Dependent Effective Mass and Asymmetry Effects on the Electronic and Optical Properties of Quantum Wells with Improved Rosen–Morse Potential

Effects of the Magnetic Field and Thickness of Layers on Intersubband Absorption in Asymmetric Double Parabolic Quantum Wells

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

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