2013
DOI: 10.1063/1.4812702
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Tuning the optical bandgap of TiO2-TiN composite films as photocatalyst in the visible light

Abstract: TiO2-TiN composite catalysts were prepared by oxidizing the TiN films in air at 350 °C. By adjusting the oxidation time to control the oxidation stage of TiN films, the optical band gap of the TiO2-TiN composites can be varied in a wide range from 1.68 eV to 3.23 eV. These composite films all showed red shift in photo-response towards the visible region, and depending on the optical band gap, some composite films exhibited good catalytic activity in the visible light region. This study provides a simple but ef… Show more

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Cited by 36 publications
(20 citation statements)
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“…The first band gap can be attributed to the presence of the titanium oxide phase in all of the samples as confirmed by the FT-IR spectroscopy, and the second one corresponds to T iN phase. A band gap tuning has been down in T iO 2 − T iN nanocomposites in the range of 1.68 -3.23 eV, which are the values near the energies obtained in Figure 9 [53].…”
Section: Determination Of the Band Gapsupporting
confidence: 75%
“…The first band gap can be attributed to the presence of the titanium oxide phase in all of the samples as confirmed by the FT-IR spectroscopy, and the second one corresponds to T iN phase. A band gap tuning has been down in T iO 2 − T iN nanocomposites in the range of 1.68 -3.23 eV, which are the values near the energies obtained in Figure 9 [53].…”
Section: Determination Of the Band Gapsupporting
confidence: 75%
“…However, these values are slightly higher than that those reported in literature (E g~1 .23-1.45 eV) [25,43]. The crystallization of secondary phases having higher band gap values than that of the CMTS phase explain the higher observed band gap energy range of the films deposited from 280 to 360 • C. Indeed, the possibility to tune the optical band gap as a function of the proportion of phases in composite film has already been reported [44]. Nie et al have also observed an increase of the band gap energy in CMTS films due to the crystallization of sulfide impurity which exhibits a band gap energy of about 2 eV as deposited [16].…”
Section: Electrical Characterizationmentioning
confidence: 65%
“…The lattice spacing was measured using Gatan Micrograph Suite ® software. The measured lattice spacing of 0.21 nm corresponds to the spacing between (200) planes of TiN, whereas the lattice spacing of 0.35 nm corresponds to the spacing between the (101) planes of anatase TiO 2 [ 41 ].…”
Section: Figurementioning
confidence: 99%