Zinc
oxide (ZnO) nanostructures are extensively used as active
materials for ultraviolet (UV) photodetectors, but the high dark current
arising from intrinsic defects limits their performance. An emerging
strategy to alleviate such problems includes the formation of heterostructures
with transition metal dichalcogenides (TMDs), which until today have
been limited to their two-dimensional structures, leaving the superior
physicochemical properties in their quantum dot (QD) configuration
untapped. Here, we devise a strategy to reduce surface defects by
decorating ZnO nanorods with MoSe2 QDs fabricated through
pulsed-laser ablation, using a facile spin-coating method. Through
various surface and optical characterizations, we confirm the formation
of heterostructures, wherein MoSe2 reduces the number of
vacancy defects in the ZnO. As a result, when used as a UV photodetector,
the heterostructures exhibit a simultaneous 51% decrease in dark current
and 79% increase in photocurrent, i.e., a 4-fold sensitivity compared
to the pure ZnO counterpart. Our study presents a strategy to enhance
UV photodetector efficiency by utilizing metal oxide/quantum dot heterostructures
produced through a facile method. In a broader context, it underscores
the efficacy of quantum dot-based heterostructures in optimizing optoelectronic
devices.