The current knowledge about the presence
of cation radicals in
organic semiconductors is connected with oxidized constitutional units
and their interaction with counterions. In this work, we have shown
that the formation of cation radicals in poly(3,4-ethylenedioxythiophene)
is induced by intermolecular electrostatic interactions, particularly
by hydrogen-bond formation between formic acid and polymer. Raman,
XPS, UV–vis, and EPR spectroscopies were used to prove that
by using the simplest carboxylic acid, which can form hydrogen bonding,
it is possible to form localized cation radicals. Moreover, it was
shown that by replacing formic acid with o-phosphoric
acid, it is possible to obtain delocalized cation radicals. The gained
new understanding how to tune the formation and nature of cation radicals
in organic semiconductors can be used in the design of organic electronics.