Tunnel Diode Revealing Peculiarities at I-V Measurements in Multijunction III-V Solar Cells

Andreev, V. M.; Ionova, E. A.; Larionov, V. R.; Rumyantsev, V.D.; Shvarts, М. Z.; Glennb, G.

doi:10.1109/wcpec.2006.279577

Cited by 27 publications

(28 citation statements)

References 3 publications

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“…Figures 3,5,7,and 8 show the characteristic properties of the solar cells with the same 1% grid shadowing loss in response to irradiation with 20 mW laser light (almost equivalent to 1-sun solar irradiance). Figure 3 shows the properties of a GaAs solar cell with a 1.42 eV bandgap against laser wavelength.…”

Section: Gaas Solar Cellmentioning

confidence: 99%

Conversion efficiencies of single-junction III–V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for laser wireless power transmission

Jomen

Tomita

Toshiki

et al. 2018

Jpn. J. Appl. Phys.

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The power conversion efficiencies of single-junction III-V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for wireless power transmission were investigated by varying the wavelength and incident power of a laser diode. The GaAs solar cell exhibited the highest conversion efficiency of 52.7% at a laser wavelength of 824 nm and a laser beam irradiance of 4 suns. For each solar cell, the conversion efficiency peaked at an optimal incident laser wavelength and this effect was examined in detail. It was found that the conversion efficiency is maximal when the laser photon energy is 80-100 meV higher than the bandgap of the semiconductor material.

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Section: Gaas Solar Cellmentioning

confidence: 99%

Conversion efficiencies of single-junction III–V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for laser wireless power transmission

Jomen

Tomita

Toshiki

et al. 2018

Jpn. J. Appl. Phys.

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“…These multi-subcell photovoltaic devices are featuring record conversion efficiencies. [12][13][14][15][16][17][18][19][20][21][22] However, while the upper limit of the p/n junction thickness has been well characterized in the past for GaAs or other III-V semiconductor alloys, the lower limit of the base thickness is still unknown despite the great progress in the field recently. [23][24][25][26][27][28] In this work, we therefore explore the thinnest p/n junctions achievable in practice in GaAs VEHSA structures.…”

mentioning

confidence: 99%

High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%

Fafard

Proulx

York

et al. 2016

Applied Physics Letters

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Photovoltaic power converting III–V semiconductor devices based on the Vertical Epitaxial HeteroStructure Architecture (VEHSA) design have been achieved with up to 20 thin p/n junctions (PT20). Open circuit photovoltages in excess of 23 V are measured for a continuous wave monochromatic optical input power of ∼1 W tuned in the 750 nm–875 nm wavelength range. Conversion efficiencies greater than 60% are demonstrated when the PT20 devices are measured near the peak of their spectral response. Noticeably, the PT20 structure is implemented with its narrowest ultrathin base having a thickness of only 24 nm. In the present study, the spectral response of the PT20 peaks at external quantum efficiency (EQE) of 89%/20 for an input wavelength of 841 nm. We also performed a detailed analysis of the EQE dependence with temperature and for VEHSA structures realised with a varied number of p/n junctions. The systematic study reveals the correlations between the measured conversion efficiencies, the EQE behavior, and the small deviations in the implementation of the optimal designs. Furthermore, we modeled the photovoltage performance of devices designed with thinner bases. For example, we derive that the narrowest subcell of a PT60 structure would have a base as thin as 8 nm, it is expected to still generate an individual subcell photovoltage of 1.14 V, and it will begin to feature 2-dimensional quantum well effects.

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“…-recording the spectral response curves in absolute units for a cell under steady-state colour and modulated monochromatic illuminations [18]; -obtaining the illuminated I-V curves by means of a solar simulator with adjustable spectrum: to check the tunnel diodes working abilities, studying of the I-V curves at nonuniform illumination, or very strong one [18,19]; -recording, after mounting the cells in a module, the I-V curve under illumination by means of a solar simulator, reproducing the sun angle-size.…”

Section: Indoor Characterization Of the Concentrator Modulesmentioning

confidence: 99%

“…Air-cooling of the cells is employed to prevent heat accumulation. Very high illumination levels and very low resistance of the measurement circuit may be required at characterization of the tunnel diodes commutating in series the sub-cells in a monolithic multijunction cell structure [19]. In Figure13, a family of the I-V curves is shown for a GaInP/GaAs/Ge triple-junction cell.…”

Section: Indoor Characterization Of the Concentrator Modulesmentioning

confidence: 99%

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Terrestrial Concentrator PV Systems

Ĺuque¹,

Viacheslav²

Springer Series in Optical Sciences

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Tunnel Diode Revealing Peculiarities at I-V Measurements in Multijunction III-V Solar Cells

Cited by 27 publications

References 3 publications

Conversion efficiencies of single-junction III–V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for laser wireless power transmission

Conversion efficiencies of single-junction III–V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for laser wireless power transmission

High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%

Terrestrial Concentrator PV Systems

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