Tunnel hopping current and trap filling in insulating layers

Abstract

The differential equation of trap filling with detrapping is solved at the case of tunnel hopping current conduction in insulating layers. The time dependent de current at constant field is shown to give the average values of time constants τ of tunnel hopping transitions, trap distances xt, and trap densities Nt. Increasing the field step by step one obtains a raw feature of the energy distribution of trap density above the Fermi level. Observation of two well separated time constants indicates strong interface region trap filling. The derived method is limited by the change from tunnel hopping to band conduction.

Kinetic Monte Carlo Simulations of Defects in Anatase Titanium Dioxide

“…the overview on defects in the Introduction), so transport occurs via small polarons. Accordingly, we refer to the Miller–Abrahams hopping rates for TAT processes where Δ E = E f – E i , the energy difference between initial and final state, r ij is the trap–trap distance, and is the localization radius. We assume a delta-like defect-potential for the traps, so the Coulomb potential of initially positively charged traps is neglected.…”

Investigation of NbOx-based volatile switching device with self-rectifying characteristics

“…When the reading voltage comes to be higher than 0.5 V, the device does not relax any more, which may be a rough reflection of the energy gap between the trap-energy level and the Fermi level of gold electrode. By calculating from relaxation time of 80 ms according to the phonon tunneling formula in [7], we can obtain the trap barrier about 0.3 V, which implies a coincidence of the two phenomena.…”