2018
DOI: 10.1039/c7ra13108a
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Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Abstract: In this manuscript, an effective tunnel-injection structure, in which the WS2 quantum dots (QDs) act as the electron injector and the InGaN quantum wells (QWs) act as the light emitters, separated by GaN barriers.

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Cited by 2 publications
(4 citation statements)
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“…The PL decay of MoS 2 QDs was initially increased as p was increased to 0.53 × 10 12 cm –2 , but then decreased after p was further increased to 2.08 × 10 12 cm –2 . As shown by the solid lines of Figure a, the PL decay can be well fitted by a stretch exponential function: , where p is the carrier densities, k is the decay rate and β is the dispersive component. In a stretched exponential function, the average decay time ( τ PL ) can be obtained by the following: , where Γ is the Gamma function.…”
Section: Resultsmentioning
confidence: 85%
See 1 more Smart Citation
“…The PL decay of MoS 2 QDs was initially increased as p was increased to 0.53 × 10 12 cm –2 , but then decreased after p was further increased to 2.08 × 10 12 cm –2 . As shown by the solid lines of Figure a, the PL decay can be well fitted by a stretch exponential function: , where p is the carrier densities, k is the decay rate and β is the dispersive component. In a stretched exponential function, the average decay time ( τ PL ) can be obtained by the following: , where Γ is the Gamma function.…”
Section: Resultsmentioning
confidence: 85%
“…As shown by the solid lines of Figure a, the PL decay can be well fitted by a stretch exponential function: , where p is the carrier densities, k is the decay rate and β is the dispersive component. In a stretched exponential function, the average decay time ( τ PL ) can be obtained by the following: , where Γ is the Gamma function. The dependence of τ PL on p was obtained from eq , as plotted in Figure b.…”
Section: Resultsmentioning
confidence: 85%
“…29,32−35 Furthermore, since the electron affinity of W x S 1−x is similar to that of GaN, the photogenerated carriers at the GaN NWs are readily transferred to the CBM of W x S 1−x . 36,37 This indicates that GaN NWs with W x S 1−x (GaN-NW-W x S 1−x ) have the potential to work as a highly efficient photoanode for the PEC-WS.…”
Section: Introductionmentioning
confidence: 99%
“…In the current work, we have developed for the first time a highly efficient method for PEC-WS using GaN NWs covered with tungsten sulfide (W x S 1– x ) as a photoanode. W x S 1– x with an amorphous phase is considered as a promising cocatalyst because of its accelerated HER kinetics and reduced carrier recombination. , Furthermore, since the electron affinity of W x S 1– x is similar to that of GaN, the photogenerated carriers at the GaN NWs are readily transferred to the CBM of W x S 1– x . , This indicates that GaN NWs with W x S 1– x (GaN-NW-W x S 1– x ) have the potential to work as a highly efficient photoanode for the PEC-WS.…”
Section: Introductionmentioning
confidence: 99%