2013
DOI: 10.1016/j.nimb.2012.12.100
|View full text |Cite
|
Sign up to set email alerts
|

Tunnel junction sensors for HCI-surface measurements at low kinetic energies

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2015
2015
2017
2017

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 18 publications
0
2
0
Order By: Relevance
“…As a note, the devices presented here are representative samples from a very large number of devices made using the same processes spanning over a decade. 23,30,31 …”
Section: Methodsmentioning
confidence: 99%
“…As a note, the devices presented here are representative samples from a very large number of devices made using the same processes spanning over a decade. 23,30,31 …”
Section: Methodsmentioning
confidence: 99%
“…[18]). Finally, there is preliminary evidence of increased damage to dielectric thin-film targets for decreased HCI * russell.lake@aalto.fi velocities in tunnel junction sensors [19]. Many previous studies have focused on intense electronic excitations due to charge-dependent potential-energy deposition and subsequent defect formation associated with HCI neutralization [13,[20][21][22][23][24].…”
mentioning
confidence: 99%